SPA11N60CFD Infineon Technologies, SPA11N60CFD Datasheet - Page 3

• Manufacturer Part Number: SPA11N60CFD
• Description: MOSFET N-CH 600V 11A TO220-3
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA11N60CFD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 440 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 1.9mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 440mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.44 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216317

Rev. 1.4
0)
1)
2)
3)
4)
5)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
J-STD20 and JESD22
Limited only by maximum temperature.
Pulse width t
Repetitive avalanche causes additional power losses that can be calculated as P
C
C
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
4)
5)
is a fixed capacitance that gives the same stored energy as C
p
limited by T
j,max
Symbol Conditions
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
plateau
iss
oss
rss
o(er)
o(tr)
gs
gd
g
V
f =1 MHz
V
to 480 V
V
V
R
V
V
page 3
GS
GS
DD
GS
DD
GS
G
=6.8
=0 V, V
=0 V, V
=480 V,
=10 V, I
=480 V, I
=0 to 10 V
DS
DS
D
oss
=11 A,
D
oss
=25 V,
=0 V
=11 A,
while V
while V
DS
DS
is rising from 0 to 80% V
AV
is rising from 0 to 80% V
min.
=E
-
-
-
-
-
-
-
-
-
-
-
-
-
AR
*f.
Values
1200
typ.
390
7.5
30
45
85
34
18
43
23
48
7
9
SPA11N60CFD
max.
64
DSS.
-
-
-
-
-
-
-
-
-
-
-
-
DSS.
Unit
pF
ns
nC
V
2010-12-21