SPA11N60CFD Infineon Technologies, SPA11N60CFD Datasheet - Page 5

MOSFET N-CH 600V 11A TO220-3

SPA11N60CFD

Manufacturer Part Number
SPA11N60CFD
Description
MOSFET N-CH 600V 11A TO220-3
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPA11N60CFD

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
440 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
5V @ 1.9mA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
33W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
440mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.44 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
33 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000216317

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPA11N60CFD
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
SPA11N60CFD
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.4
1 Power dissipation
P
3 Max. transient thermal impedance
I
parameter: D=t
D
tot
=f(V
=f(T
10
10
10
10
10
35
30
25
20
15
10
DS
5
0
-1
-2
-3
1
0
C
10
0
); T
)
-6
j
0.02
=25 °C
0.05
0.01
0.2
0.1
single pulse
0.5
10
p
-5
/T
40
10
-4
10
T
-3
t
C
p
80
[°C]
[s]
10
-2
10
120
-1
10
0
160
10
page 5
1
2 Safe operating area
I
parameter: t
4 Typ. output characteristics
I
parameter: t
D
D
=f(V
=f(V
10
10
10
10
35
30
25
20
15
10
DS
DS
5
0
-1
2
1
0
10
); T
); T
0
0
limited by on-state
resistance
p
C
p
j
=25 °C
=25 °C; D =0
= 10µs V
5
10
GS
1
V
V
DS
DS
10
DC
[V]
[V]
20 V
10 ms
5 V
10
SPA11N60CFD
6.5 V
7 V
6 V
5.5 V
2
100 µs
1 ms
15
10 µs
10 V
8 V
1 µs
2010-12-21
10
20
3

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