SPA11N60CFD Infineon Technologies, SPA11N60CFD Datasheet - Page 7

• Manufacturer Part Number: SPA11N60CFD
• Description: MOSFET N-CH 600V 11A TO220-3
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPA11N60CFD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 440 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 5V @ 1.9mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 440mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.44 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000216317

Rev. 1.4
9 Typ. gate charge
V
parameter: V
11 Avalanche SOA
I
parameter: T
AR
GS
=f(t
=f(Q
12
10
11
10
8
6
4
2
0
AR
9
8
7
6
5
4
3
2
1
0
10
0
)
gate
-3
); I
j(start)
DD
10
D
-2
=11 A pulsed
10
10
-1
20
Q
10
t
gate
AR
0
125 °C
[µs]
[nC]
10
30
1
120 V
25 °C
10
2
40
10
480 V
3
10
page 7
50
4
10 Forward characteristics of reverse diode
I
parameter: T
12 Avalanche energy
E
F
=f(V
AS
=f(T
10
350
300
250
200
150
100
10
10
10
50
SD
-1
0
2
1
0
20
j
)
); I
0
D
=5.5 A; V
j
0.5
60
150 °C
DD
=50 V
V
T
SD
100
j
25 °C, 98%
[°C]
1
25 °C
[V]
SPA11N60CFD
140
1.5
150 °C, 98%
2010-12-21
180
2