NTB6413ANG ON Semiconductor, NTB6413ANG Datasheet

MOSFET N-CH 100V 42A D2PAK

NTB6413ANG

Manufacturer Part Number
NTB6413ANG
Description
MOSFET N-CH 100V 42A D2PAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTB6413ANG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
51nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB6413ANG
Manufacturer:
ON
Quantity:
400
Part Number:
NTB6413ANG
Manufacturer:
ON
Quantity:
12 500
NTB6413AN, NTP6413AN
N-Channel Power MOSFET
100 V, 42 A, 28 mW
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
© Semiconductor Components Industries, LLC, 2009
November, 2009 − Rev. 1
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current R
Power Dissipation
R
Pulsed Drain Current
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
I
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
Junction−to−Case (Drain) Steady State
Junction−to−Ambient (Note 1)
L(pk)
Low R
High Current Capability
100% Avalanche Tested
These are Pb−Free Devices
qJC
(Cu Area 1.127 sq in [2 oz] including traces).
= 36.5 A, L = 0.3 mH, R
DS(on)
qJC
DD
= 50 Vdc, V
Parameter
Parameter
Steady
Steady
(T
State
State
GS
J
= 25°C Unless otherwise specified)
G
= 10 Vdc,
t
p
= 25 W)
= 10 ms
T
T
T
C
C
C
= 100°C
= 25°C
= 25°C
Symbol
Symbol
T
V
R
R
J
V
E
I
P
DSS
, T
T
I
DM
I
qJC
qJA
GS
AS
D
S
D
L
stg
−55 to
Value
$20
+175
Max
100
136
178
200
260
1.1
42
28
42
35
1
°C/W
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Gate
1
V
2
(BR)DSS
100 V
1
3
6413ANG
AYWW
Drain
NTP
Drain
4
ORDERING INFORMATION
2
G
4
CASE 221A
TO−220AB
MARKING DIAGRAM
& PIN ASSIGNMENT
STYLE 5
http://onsemi.com
3
Source
R
28 mW @ 10 V
DS(ON)
6413AN = Specific Device Code
G
A
Y
WW
N−Channel
D
Publication Order Number:
= Pb−Free Device
= Assembly Location
= Year
= Work Week
MAX
Gate
S
1
1
6413ANG
CASE 418B
AYWW
Drain
2
STYLE 2
Drain
NTB
NTB6413AN/D
D
4
3
2
2
PAK
(Note 1)
I
D
42 A
MAX
3
Source
4

Related parts for NTB6413ANG

NTB6413ANG Summary of contents

Page 1

NTB6413AN, NTP6413AN N-Channel Power MOSFET 100 Features • Low R DS(on) • High Current Capability • 100% Avalanche Tested • These are Pb−Free Devices MAXIMUM RATINGS (T = 25°C Unless otherwise specified) J Parameter Drain−to−Source ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temper- ature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Resistance Forward Transconductance CHARGES, CAPACITANCES & ...

Page 3

25° DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.06 0.05 0.04 0.03 0.02 0. GATE−TO−SOURCE VOLTAGE ...

Page 4

C 1000 C oss C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

Page 5

... SINGLE PULSE 0.001 0.000001 0.00001 ORDERING INFORMATION Device NTB6413ANG NTB6413ANT4G NTP6413ANG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS 0.0001 0.001 0.01 t, PULSE TIME (s) Figure 13 ...

Page 6

... SEATING PLANE 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W 1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE VIEW W−W VIEW W− ...

Page 7

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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