IPP100N04S2-04 Infineon Technologies, IPP100N04S2-04 Datasheet - Page 7

MOSFET N-CH 40V 100A TO220-3

IPP100N04S2-04

Manufacturer Part Number
IPP100N04S2-04
Description
MOSFET N-CH 40V 100A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100N04S2-04

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
172nC @ 10V
Input Capacitance (ciss) @ Vds
5300pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.6 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000219056

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPP100N04S2-04
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. drain-source breakdown voltage
V
AS
BR(DSS)
900
800
700
600
500
400
300
200
100
= f(T
0
48
46
44
42
40
38
36
25
-60
= f(T
j
)
D
j
); I
= 80A
-20
D
= 1 mA
75
20
T
T
j
j
60
[°C]
[°C]
125
100
140
180
175
page 7
14 Typ. gate charge
V
16 Gate charge waveforms
GS
V
V
= f(Q
GS
GS
12
10
8
6
4
2
0
0
gate
Q
Q
gs
gs
); I
D
= 100A pulsed
40
Q
Q
g
g
Q
Q
Q
gate
gd
gd
[nC]
80
IPB100N04S2-04
IPP100N04S2-04
Q
Q
gate
gate
8V
120
2006-03-02
32V

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