MOSFET N-CH 100V 160A TO263-7

IPB039N10N3 G

Manufacturer Part NumberIPB039N10N3 G
DescriptionMOSFET N-CH 100V 160A TO263-7
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPB039N10N3 G datasheet
 


Specifications of IPB039N10N3 G

Package / CaseD²Pak, TO-263 (7 leads + tab)Fet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs3.9 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)100VCurrent - Continuous Drain (id) @ 25° C160A
Vgs(th) (max) @ Id3.5V @ 160µAGate Charge (qg) @ Vgs117nC @ 10V
Input Capacitance (ciss) @ Vds8410pF @ 50VPower - Max214W
Mounting TypeSurface MountGate Charge Qg88 nC
Minimum Operating Temperature- 55 CTransistor PolarityN-Channel
Resistance Drain-source Rds (on)3.9 mOhmsForward Transconductance Gfs (max / Min)152 S, 76 S
Drain-source Breakdown Voltage100 VGate-source Breakdown Voltage20 V
Continuous Drain Current160 APower Dissipation214 W
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesIPB039N10N3 G
IPB039N10N3 GTR
SP000482428
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3 Power-Transistor
Features
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R
Type
Package
Marking
Maximum ratings,
T
Parameter
Product Summary
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R
I
Symbol Conditions
I
T
T
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IPB039N10N3 G
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IPB039N10N3 G Summary of contents

  • Page 1

    ... Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPB039N10N3 G Value Unit ...

  • Page 2

    ... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions IPB039N10N3 G Values Unit min. typ. max. ...

  • Page 3

    ... Parameter Dynamic characteristics Reverse Diode Symbol Conditions 100A IPB039N10N3 G Values Unit min. typ. max. ...

  • Page 4

    ... Power dissipation P T 250 200 150 100 100 T [° Safe operating area [ Drain current 180 160 140 120 100 150 200 0 4 Max. transient thermal impedance IPB039N10N3 G 50 100 150 200 T [° [ ...

  • Page 5

    ... Typ. output characteristics 250 200 150 100 [ Typ. transfer characteristics 250 200 150 100 [ Typ. drain-source on resistance Typ. forward transconductance 240 200 160 120 IPB039N10N3 G 80 120 160 200 240 I [ 120 160 I [A] D 200 ...

  • Page 6

    ... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPB039N10N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

  • Page 7

    ... Avalanche characteristics 1000 100 [µ Drain-source breakdown voltage 110 105 100 95 90 -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPB039N10N3 [nC] gate 100 g ate ...

  • Page 8

    ... PG-TO263-3: Outline IPB039N10N3 G ...

  • Page 9

    ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPB039N10N3 G ...