IPB039N10N3 G Infineon Technologies, IPB039N10N3 G Datasheet - Page 6

• Manufacturer Part Number: IPB039N10N3 G
• Description: MOSFET N-CH 100V 160A TO263-7
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB039N10N3 G

• Package / Case: D²Pak, TO-263 (7 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 3.5V @ 160µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 8410pF @ 50V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Gate Charge Qg: 88 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.9 mOhms
• Forward Transconductance Gfs (max / Min): 152 S, 76 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB039N10N3 G; IPB039N10N3 GTR; SP000482428

9 Drain-source on-state resistance
R
11 Typ. capacitances
C
V
10
10
10
10
9
8
7
6
5
4
3
2
1
0
-60
4
3
2
1
0
T
V
I
-20
20
f
20
V
T
V
j
60
DS
[°C]
40
[V]
100
60
140
180
80
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
V
3.5
2.5
1.5
0.5
10
10
10
10
4
3
2
1
0
3
2
1
0
-60
0
T
I
T
V
-20
V
0.5
20
V
T
SD
j
60
[°C]
1
[V]
IPB039N10N3 G
100
1.5
140
180
2