IPB039N10N3 G Infineon Technologies, IPB039N10N3 G Datasheet - Page 8

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IPB039N10N3 G

Manufacturer Part Number
IPB039N10N3 G
Description
MOSFET N-CH 100V 160A TO263-7
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB039N10N3 G

Package / Case
D²Pak, TO-263 (7 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.9 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
3.5V @ 160µA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
8410pF @ 50V
Power - Max
214W
Mounting Type
Surface Mount
Gate Charge Qg
88 nC
Minimum Operating Temperature
- 55 C
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.9 mOhms
Forward Transconductance Gfs (max / Min)
152 S, 76 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
160 A
Power Dissipation
214 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPB039N10N3 G
IPB039N10N3 GTR
SP000482428
IPB039N10N3 G
PG-TO263-3: Outline

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