IPB011N04N G Infineon Technologies, IPB011N04N G Datasheet
IPB011N04N G
Manufacturer Part Number
IPB011N04N G
Description
MOSFET N-CH 40V 180A TO263-7
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB011N04N_G.pdf
(9 pages)
Specifications of IPB011N04N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
180A
Vgs(th) (max) @ Id
4V @ 200µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
20000pF @ 20V
Power - Max
250W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (7 leads + tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
850µohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-263
Rohs Compliant
Yes
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0011 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
180 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000388298
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