MOSFET N-CH 40V 100A TO220-3

IPP100N04S3-03

Manufacturer Part NumberIPP100N04S3-03
DescriptionMOSFET N-CH 40V 100A TO220-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPP100N04S3-03 datasheet
 

Specifications of IPP100N04S3-03

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs2.8 mOhm @ 80A, 10VDrain To Source Voltage (vdss)40V
Current - Continuous Drain (id) @ 25° C100AVgs(th) (max) @ Id4V @ 150µA
Gate Charge (qg) @ Vgs145nC @ 10VInput Capacitance (ciss) @ Vds9600pF @ 25V
Power - Max214WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)3.3 m Ohms
Drain-source Breakdown Voltage40 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current100 APower Dissipation214 W
Maximum Operating Temperature+ 175 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSP000261227  
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OptiMOS
®
-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
IPB100N04S3-03
PG-TO263-3-2
IPI100N04S3-03
PG-TO262-3-1
IPP100N04S3-03
PG-TO220-3-1
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
Continuous drain current
2)
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.0
IPI100N04S3-03, IPP100N04S3-03
Product Summary
V
DS
R
(SMD Version)
DS(on)
I
D
PG-TO263-3-2
Marking
3PN0403
3PN0403
3PN0403
Symbol
Conditions
1)
I
T
=25°C, V
=10V
D
C
GS
2)
T
=100°C, V
=10V
C
GS
I
T
=25 °C
D,pulse
C
E
I
=80 A
AS
D
V
GS
P
T
=25 °C
tot
C
T
, T
j
stg
page 1
IPB100N04S3-03
40
V
2.5
m
100
A
PG-TO262-3-1
PG-TO220-3-1
Value
Unit
100
A
100
400
898
mJ
±20
V
214
W
-55 ... +175
°C
55/175/56
2007-05-03

IPP100N04S3-03 Summary of contents

  • Page 1

    ... Parameter Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 IPI100N04S3-03, IPP100N04S3-03 Product Summary (SMD Version) DS(on PG-TO263-3-2 Marking 3PN0403 ...

  • Page 2

    ... (BR)DSS =150 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 Values min. typ. max 0 2.1 3.0 4 100 = 100 - 2.2 2.8 - 1.9 2.5 Unit K µA nA mΩ 2007-05-03 ...

  • Page 3

    ... C I S,pulse = =25 ° = =50A /dt =100 A/µ 0.7 K/W the chip is able to carry 218 A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 Values min. typ. max. - 7400 9600 = 2000 2600 - 310 - = 110 - 5.2 ...

  • Page 4

    ... V DS Rev. 1.0 2 Drain current 120 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-05-03 ...

  • Page 5

    ... V GS Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 3.5 2.5 1.5 -55 ° [V] page 5 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3- ° 6 100 200 300 I [ -60 - 100 T [° 400 140 180 2007-05-03 ...

  • Page 6

    ... V SD Rev. 1.0 10 Typ. capacitances 1500µ 100 140 180 12 Typ. avalanche characteristics I = f(t AS parameter: T 1000 100 25 ° 0.8 1 1.2 1.4 [V] page 6 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3- MHz [ j(start) 100°C 150° 100 t [µs] AV Ciss Coss Crss 25 30 25°C 1000 2007-05-03 ...

  • Page 7

    ... A 1000 80 A 500 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.0 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms 100 120 [nC] page 7 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3- -60 - 100 T [° 140 180 gate gate 2007-05-03 ...

  • Page 8

    ... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI100N04S3-03, IPP100N04S3-03 page 8 IPB100N04S3-03 2007-05-03 ...

  • Page 9

    ... Revision History Version Rev. 1.0 IPI100N04S3-03, IPP100N04S3-03 Date page 9 IPB100N04S3-03 Changes 2007-05-03 ...