IPP100N04S3-03 Infineon Technologies, IPP100N04S3-03 Datasheet - Page 6

• Manufacturer Part Number: IPP100N04S3-03
• Description: MOSFET N-CH 40V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N04S3-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 145nC @ 10V
• Input Capacitance (ciss) @ Vds: 9600pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000261227

Rev. 1.0
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
3.5
2.5
1.5
= f(T
4
3
2
1
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
= V
0.4
20
DS
175 °C
150µA
0.6
V
T
SD
j
60
[°C]
25 °C
[V]
0.8
1500µA
100
1
140
1.2
180
1.4
page 6
10 Typ. capacitances
C = f(V
12 Typ. avalanche characteristics
I
parameter: T
AS
= f(t
1000
100
10
10
10
10
1
DS
5
4
3
AV
0
1
); V
)
j(start)
GS
IPI100N04S3-03, IPP100N04S3-03
= 0 V; f = 1 MHz
5
10
10
t
V
AV
DS
15
150°C
[µs]
[V]
IPB100N04S3-03
100
20
100°C
25
2007-05-03
25°C
Coss
Crss
Ciss
1000
30