IPP100N04S3-03 Infineon Technologies, IPP100N04S3-03 Datasheet - Page 7

• Manufacturer Part Number: IPP100N04S3-03
• Description: MOSFET N-CH 40V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N04S3-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 145nC @ 10V
• Input Capacitance (ciss) @ Vds: 9600pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000261227

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
4000
3500
3000
2500
2000
1500
1000
= f(T
= f(Q
500
12
10
0
8
6
4
2
0
25
0
j
)
gate
40 A
80 A
20 A
D
); I
DD
20
D
= 80 A pulsed
75
40
Q
T
gate
j
60
[°C]
[nC]
125
80
8 V
100
32 V
120
175
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
GS
GS
52
48
44
40
36
32
-60
= f(T
Q
Q
gs
gs
j
IPI100N04S3-03, IPP100N04S3-03
); I
-20
D
= 1 mA
Q
Q
20
g
g
Q
Q
T
gd
gd
j
60
[°C]
IPB100N04S3-03
100
Q
Q
gate
gate
140
2007-05-03
180