IPP100N04S3-03 Infineon Technologies, IPP100N04S3-03 Datasheet - Page 9

• Manufacturer Part Number: IPP100N04S3-03
• Description: MOSFET N-CH 40V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N04S3-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 145nC @ 10V
• Input Capacitance (ciss) @ Vds: 9600pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.3 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 214 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000261227

IPB100N04S3-03
IPI100N04S3-03, IPP100N04S3-03
Revision History
Version
Date
Changes
Rev. 1.0
page 9
2007-05-03