IPB03N03LA G Infineon Technologies, IPB03N03LA G Datasheet

MOSFET N-CH 25V 80A TO-263

IPB03N03LA G

Manufacturer Part Number
IPB03N03LA G
Description
MOSFET N-CH 25V 80A TO-263
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB03N03LA G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 55A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 100µA
Gate Charge (qg) @ Vgs
57nC @ 5V
Input Capacitance (ciss) @ Vds
7027pF @ 15V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.1 m Ohms
Forward Transconductance Gfs (max / Min)
112 S / 56 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB03N03LA G
IPB03N03LAGINTR
IPB03N03LAGXT
SP000087858
Rev. 1.6
1)
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel - Logic level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
IPB03N03LA G
J-STD20 and JESD22
®
2 Power-Transistor
4)
j
Package
PG-TO263-3-2
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target applications
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
03N03LA
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=80 A, R
=80 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
2)
3)
DS
GS
=20 V,
=25
Product Summary
V
R
I
D
DS
DS(on),max
(SMD version)
-55 ... 175
55/175/56
Value
385
960
±20
150
80
80
PG-TO263-3-2
6
IPB03N03LA G
25
2.7
80
Unit
A
mJ
kV/µs
V
W
°C
V
m
A
2006-05-10

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IPB03N03LA G Summary of contents

Page 1

... I D product (FOM) Marking 03N03LA Symbol Conditions =25 ° =100 ° =25 °C D,pulse = = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPB03N03LA (SMD version) 2 PG-TO263-3-2 Value Unit 385 960 mJ 6 kV/µs ±20 V 150 W -55 ... 175 °C 55/175/56 2006-05-10 ...

Page 2

... GSS =4 = DS(on) SMD version SMD version |>2 DS(on)max = K/W the chip is able to carry 175 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPB03N03LA G Values Unit min. typ. max K 1.2 1 0.1 1 µ 100 - 10 100 nA - 3.3 4 2.2 2.7 - 0.9 ...

Page 3

... See figure 16 for gate charge parameter definition Rev. 1.6 Symbol Conditions C iss = oss f =1 MHz C rss t d( d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPB03N03LA G Values Unit min. typ. max. - 5283 7027 pF - 2231 2967 - 304 457 - 8 7 8 385 - 0.96 1 2006-05-10 ...

Page 4

... Drain current I =f 100 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0.01 0.001 10 100 10 0 [V] DS page 4 IPB03N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 0 10 ...

Page 5

... C °175 Rev. 1.6 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 140 120 100 ° [V] GS page 5 IPB03N03LA =25 ° 2.8 V 3.2 V 3 100 120 140 I [A] D =25 ° [ 4 160 80 2006-05-10 ...

Page 6

... GS(th) parameter: I 2.5 2 1.5 typ 1 0 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 10 Crss [V] DS page 6 IPB03N03LA µA 1000 µA 100 - 100 140 T [° °25 C °175 %C, 98 °175 %C, 98 °25 0.5 1 1.5 V [V] SD 180 2 2006-05-10 ...

Page 7

... AV GS parameter: T j(start) 100 C °150 Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.6 14 Typ. gate charge V =f(Q GS parameter °25 C °100 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB03N03LA =40 A pulsed gate [nC] gate 100 Q g ate 2006-05-10 ...

Page 8

... Package Outline P-TO263-3-2: Outline Footprint Dimensions in mm Rev. 1.6 Packaging page 8 IPB03N03LA G 2006-05-10 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.6 page 9 IPB03N03LA G 2006-05-10 ...

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