IPB027N10N3 G Infineon Technologies, IPB027N10N3 G Datasheet
IPB027N10N3 G
Specifications of IPB027N10N3 G
Related parts for IPB027N10N3 G
IPB027N10N3 G Summary of contents
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... Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPB027N10N3 G Value Unit ...
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... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions IPB027N10N3 G Values Unit min. typ. max. ...
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... Parameter Dynamic characteristics Reverse Diode Symbol Conditions 100 IPB027N10N3 G Values Unit min. typ. max. ...
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... Power dissipation P T 350 300 250 200 150 100 100 T [° Safe operating area [ Drain current 140 120 100 150 200 0 4 Max. transient thermal impedance IPB027N10N3 G 50 100 150 200 T [° [ ...
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... Typ. output characteristics 300 250 200 150 100 [ Typ. transfer characteristics 300 250 200 150 100 [ Typ. drain-source on resistance Typ. forward transconductance 240 200 160 120 IPB027N10N3 120 160 I [ 120 160 I [A] D ...
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... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPB027N10N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...
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... Avalanche characteristics 1000 100 [µ Drain-source breakdown voltage 110 105 100 95 90 -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPB027N10N3 120 Q [nC] gate 160 g ate ...
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... PG-TO263-3: Outline IPB027N10N3 G ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPB027N10N3 G ...