IRFD123 Vishay, IRFD123 Datasheet
IRFD123
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IRFD123 Summary of contents
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... W. HEXDIP IRFD123PbF SiHFD123-E3 IRFD123 SiHFD123 = 25 °C, unless otherwise noted ° 100 ° °C C for Ω 2.6 A (see fig. 12 ≤ 175 ° IRFD123, SiHFD123 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 100 DS V ± 1 0. 0.0083 E 100 ...
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... IRFD123, SiHFD123 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 90161 S-82994-Rev. A, 12-Jan- °C Fig Typical Transfer Characteristics C Fig Normalized On-Resistance vs. Temperature = 175 °C C IRFD123, SiHFD123 Vishay Siliconix www.vishay.com 3 ...
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... IRFD123, SiHFD123 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 90161 S-82994-Rev. A, 12-Jan-09 ...
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... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90161 S-82994-Rev. A, 12-Jan-09 IRFD123, SiHFD123 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...
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... IRFD123, SiHFD123 Vishay Siliconix Vary t to obtain p required I AS D.U. 0. Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...
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... D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices and 3 V drive devices Fig For N-Channel IRFD123, SiHFD123 Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...