IRF624S Vishay, IRF624S Datasheet

MOSFET N-CH 250V 4.4A D2PAK

IRF624S

Manufacturer Part Number
IRF624S
Description
MOSFET N-CH 250V 4.4A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF624S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 2.6A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF624S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF624SPBF
Quantity:
13 900
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91030
S09-0071-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 4.4 A, dI/dt ≤ 90 A/µs, V
= 50 V, starting T
G D
(Ω)
D
S
2
PAK (TO-263)
a
J
= 25 °C, L = 8.3 mH, R
c
a
a
DD
b
V
≤ V
GS
e
= 10 V
DS
G
, T
N-Channel MOSFET
J
e
Single
≤ 150 °C.
250
2.7
7.8
14
G
D
S
= 25 Ω, I
C
Power MOSFET
= 25 °C, unless otherwise noted
V
1.1
GS
AS
at 10 V
= 4.4 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRF624SPbF
SiHF624S-E3
IRF624S
SiHF624S
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
PAK (TO-263)
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRF624S, SiHF624S
design,
- 55 to + 150
LIMIT
0.025
300
± 20
0.40
250
100
4.4
2.8
4.4
5.0
3.1
4.8
14
50
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRF624S Summary of contents

Page 1

... PAK (TO-263) IRF624SPbF SiHF624S-E3 IRF624S SiHF624S = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 4.4 A (see fig. 12 ≤ 150 °C. J IRF624S, SiHF624S Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 250 DS V ± 4 2 0.40 0.025 E 100 ...

Page 2

... IRF624S, SiHF624S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Fig Typical Output Characteristics, T Document Number: 91030 S09-0071-Rev. A, 02-Feb-09 4 µs Pulse Width ° 91030_03 = 25 ° µs Pulse Width T = 150 ° 91030_04 Fig Normalized On-Resistance vs. Temperature = 150 °C C IRF624S, SiHF624S Vishay Siliconix 1 10 ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig ...

Page 4

... IRF624S, SiHF624S Vishay Siliconix 600 MHz iss gs 500 rss oss 400 300 200 100 Drain-to-Source Voltage ( 91030_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 4 125 Total Gate Charge (nC) 91030_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91030_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91030 S09-0071-Rev. A, 02-Feb-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF624S, SiHF624S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF624S, SiHF624S Vishay Siliconix 91030_12c Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 240 200 160 120 100 50 Starting T , Junction Temperature (°C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D Top 2.0 A 2.8 A Bottom 4.4 A 125 150 Current regulator Same type as D.U.T. ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig For N-Channel IRF624S, SiHF624S Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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