IRF644S Vishay, IRF644S Datasheet

MOSFET N-CH 250V 14A D2PAK

IRF644S

Manufacturer Part Number
IRF644S
Description
MOSFET N-CH 250V 14A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF644S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF644S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF644S
Manufacturer:
IR
Quantity:
8 000
Company:
Part Number:
IRF644S
Quantity:
19 250
Company:
Part Number:
IRF644S MOS
Quantity:
55 000
Part Number:
IRF644SPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
IRF644STRLPBF
Manufacturer:
IR
Quantity:
20 000
Note
a. See device orientation.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91040
S-Pending-Rev. B, 09-Oct-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
DS
DS(on)
g
gs
gd
(Max.) (nC)
(nC)
(nC)
(V)
(Ω)
K
SMD-220
a
a
D
G
S
a
b
V
GS
SMD-220
IRF644SPbF
SiHF644S-E3
IRF644S
SiHF644S
e
= 10 V
G
N-Channel MOSFET
e
Single
250
68
11
35
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.28
Work-in-Progress
GS
at 10 V
T
T
C
A
= 25 °C
= 25 °C
T
T
C
C
SMD-220
IRF644STRLPbF
SiHF644STL-E3
IRF644STRL
SiHF644STL
= 100 °C
= 25 °C
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The SMD-220 is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The SMD-220 is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
a
a
SYMBOL
a
V
V
E
E
I
a
I
P
device
I
DM
AR
DS
GS
AS
AR
D
D
IRF644S, SiHF644S
design,
SMD-220
IRF644STRRPbF
SiHF644STR-E3
IRF644STRR
SiHF644STR
LIMIT
0.025
± 20
250
550
125
8.5
1.0
3.1
14
56
14
13
low
Vishay Siliconix
on-resistance
a
a
a
www.vishay.com
a
UNIT
W/°C
mJ
mJ
W
V
A
A
and
1

Related parts for IRF644S

IRF644S Summary of contents

Page 1

... SMD-220 IRF644STRLPbF SiHF644STL-E3 IRF644STRL SiHF644STL = 25 °C, unless otherwise noted ° 100 ° ° °C A Work-in-Progress IRF644S, SiHF644S Vishay Siliconix device design, low on-resistance SMD-220 a a IRF644STRRPbF a a SiHF644STR- IRF644STRR a a SiHF644STR SYMBOL LIMIT V 250 DS V ± 20 ...

Page 2

... IRF644S, SiHF644S Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11 starting ° 4.5 mH ≤ dI/dt ≤ 150 A/µs, V ≤ ...

Page 3

... S showing the integral reverse junction diode ° ° 7.9 A, dI/dt = 100 A/µ Intrinsic turn-on time is negligible (turn-on is dominated 4 µs Pulse Width ° 91040_02 Fig Typical Output Characteristics °C C IRF644S, SiHF644S Vishay Siliconix MIN. TYP. MAX 1 250 500 b - 2.3 4 Top 8 7 ...

Page 4

... IRF644S, SiHF644S Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width - Gate-to-Source Voltage ( 91040_03 Fig Typical Transfer Characteristics 3 7 2.5 2.0 1.5 1.0 0.5 0 100 120 140 160 T Junction Temperature (° 91040_04 Fig Normalized On-Resistance vs. Temperature www.vishay.com 91040_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 91040_06 Fig ...

Page 5

... V , Drain-to-Source Voltage (V) 91040_08 DS Fig Maximum Safe Operating Area Document Number: 91040 S-Pending-Rev. B, 09-Oct-08 ° 0.9 1.0 1.1 91040_09 Fig Maximum Drain Current vs. Case Temperature 10 µs 100 µ IRF644S, SiHF644S Vishay Siliconix 100 125 T , Case Temperature (° D.U. Pulse width ≤ 1 µs Duty factor ≤ ...

Page 6

... IRF644S, SiHF644S Vishay Siliconix − 0.5 0.2 0.1 0.1 0.05 0.02 0. 91040_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91040_12c www.vishay.com 6 Single Pulse (Thermal Response Rectangular Pulse Duration (s) ...

Page 7

... Body diode forward current dI/dt D.U.T. V waveform DS Diode recovery dV/dt Body diode forward drop Inductor current Ripple ≤ for logic level devices GS Fig For N-Channel IRF644S, SiHF644S Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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