BSS100 Fairchild Semiconductor, BSS100 Datasheet - Page 4

MOSFET N-CH 100V 220MA TO92

BSS100

Manufacturer Part Number
BSS100
Description
MOSFET N-CH 100V 220MA TO92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of BSS100

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 Ohm @ 220mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
220mA
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
2nC @ 10V
Input Capacitance (ciss) @ Vds
60pF @ 25V
Power - Max
630mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Typical Characteristics
0.001
0.01
0.1
Figure 9. Maximum Safe Operating Area.
0.001
10
1
Figure 7. Gate Charge Characteristics.
0.01
8
6
4
2
0
0.1
1
0
0.0001
1
R
SINGLE PULSE
I
R
DS(ON)
D
= 0.17A
JA
V
T
GS
A
= 350
= 25
LIMIT
D = 0.5
= 10V
0.2
0.4
o
o
0.1
0.05
C
C/W
0.02
V
0.01
DS
DC
, DRAIN-SOURCE VOLTAGE (V)
10s
10
Q
SINGLE PULSE
0.001
g
, GATE CHARGE (nC)
1s
0.8
100ms
10ms
Figure 11. Transient Thermal Response Curve.
1ms
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
1.2
V
DS
100
= 30V
100 s
0.01
1.6
70V
50V
1000
2
0.1
t
1
, TIME (sec)
100
80
60
40
20
5
4
3
2
1
0
0.001
0
0
Figure 8. Capacitance Characteristics.
C
RSS
1
Figure 10. Single Pulse Maximum
C
OSS
0.01
20
V
Power Dissipation.
DS
C
, DRAIN TO SOURCE VOLTAGE (V)
ISS
0.1
10
40
t
1
, TIME (sec)
1
P(pk)
Duty Cycle, D = t
T
R
J
R
- T
JA
60
JA
(t) = r(t) * R
A
t
= 350
1
= P * R
10
t
100
2
o
C/W
SINGLE PULSE
R
JA
80
JA
1
T
JA
100
(t)
/ t
A
= 350°C/W
f = 1 MHz
V
= 25°C
BSS123 Rev G(W)
2
GS
= 0 V
1000
1000
100

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