MOSFET P-CH 50V 170MA TO92

BSS110

Manufacturer Part NumberBSS110
DescriptionMOSFET P-CH 50V 170MA TO92
ManufacturerFairchild Semiconductor
BSS110 datasheet
 


Specifications of BSS110

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs10 Ohm @ 170mA, 10VDrain To Source Voltage (vdss)50V
Current - Continuous Drain (id) @ 25° C170mAVgs(th) (max) @ Id2V @ 1mA
Input Capacitance (ciss) @ Vds40pF @ 25VPower - Max630mW
Mounting TypeThrough HolePackage / CaseTO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantGate Charge (qg) @ Vgs-
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BSS84 / BSS110
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is designed to minimize on-state resistance, provide
rugged and reliable performance and fast switching. They
can be used, with a minimum of effort, in most applications
requiring up to 0.17A DC and can deliver pulsed currents up
to 0.68A. This product is particularly suited to low voltage
applications requiring a low current high side switch.
____________________________________________________________________________________________
(TO-236AB)
BSS84
Absolute Maximum Ratings
Symbol Parameter
V
Drain-Source Voltage
DSS
V
Drain-Gate Voltage (R
< 20 K )
DGR
GS
V
Gate-Source Voltage - Continuous
GSS
I
Drain Current - Continuous @ T
D
- Pulsed
@ T
P
Maximum Power Dissipation
D
T
,T
Operating and Storage Temperature Range
J
STG
T
Maximum lead temperature for soldering
L
purposes, 1/16" from case for 10 seconds
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
© 2000 Fairchild Semiconductor Corporation
Features
BSS84: -0.13A, -50V. R
BSS110: -0.17A, -50V. R
Voltage controlled p-channel small signal switch.
High density cell design for low R
High saturation current
BSS110
T
= 25°C unless otherwise noted
A
BSS84
o
= 30/35
C
-0.13
A
o
= 25
C
-0.52
A
= 25 ° C
T
0.36
A
350
May 2000
= 10
@ V
= -5V.
DS(ON)
GS
= 10
@ V
= -10V
DS(ON)
GS
.
DS(ON)
.
S
G
D
BSS110
-50
-50
±20
-0.17
-0.68
0.63
-55 to 150
300
200
°C/W
BSS84 Rev. C2 / BSS110. Rev. A3
Units
V
V
V
A
W
°C
°C

BSS110 Summary of contents

  • Page 1

    ... High density cell design for low R High saturation current BSS110 T = 25°C unless otherwise noted A BSS84 o = 30/35 C -0. -0. ° 0.36 A 350 May 2000 = -5V. DS(ON -10V DS(ON DS(ON BSS110 -50 -50 ±20 -0.17 -0.68 0.63 -55 to 150 300 200 °C/W BSS84 Rev BSS110. Rev. A3 Units °C °C ...

  • Page 2

    ... BSS110 2.2 10 BSS84 0.05 0.27 BSS110 0.05 0.29 BSS84 37 45 BSS110 37 40 All 16 25 All 5 12 All 12 All 50 All 10 All 25 BSS84 -0.13 BSS110 -0.17 BSS84 -0.52 BSS110 -0.68 BSS84 -0.95 -1.2 BSS110 -1 -1.2 BSS84 Rev BSS110. Rev. A3 Units V µA µA µ ...

  • Page 3

    ... Drain Current and Temperature 1.1 1.05 1 0.95 0.9 0. -25 Figure 6. Gate Threshold Variation = -3V -3 -4.5 -5 -0.2 -0.4 -0.6 -0 DRA IN CURRENT ( -10V 125°C J 25°C -55°C -0.2 -0.4 -0.6 -0 DRAIN CURRENT ( - 100 125 T , JUNCTION TEM PERATURE (°C) J with Temperature BSS84 Rev BSS110. Rev 150 ...

  • Page 4

    ... DUT V IN 10% Figure 12. Switching Waveforms 25°C -55°C 0.6 0.8 1 1.2 1.4 1 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature V = -10V DS -20V -40V GATE CHARGE (nC off t t d(off) r 90% 90% 10% 10% 90% 50% 50% INVERTED PULSE W IDTH BSS84 Rev BSS110. Rev ...

  • Page 5

    ... SINGLE PULSE V = -10V DS 0.01 0.005 -0 Figure 14. Maximum Safe Operating Area 0.01 0 TIME (sec typical case-to-ambient thermal resistance V = -10V 25° DRAIN -SOURCE VOLTAGE ( ( C/W JA P(pk Duty Cycle 100 o C/W BSS84 Rev BSS110. Rev (t) 2 300 ...

  • Page 6

    TO-92 Package Dimensions TO-92; TO-18 Reverse Lead Form (J35Z Option) (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0. Note: ...

  • Page 7

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...