2SK3042 Panasonic - SSG, 2SK3042 Datasheet

MOSFET N-CH 250V 7A TO-220D

2SK3042

Manufacturer Part Number
2SK3042
Description
MOSFET N-CH 250V 7A TO-220D
Manufacturer
Panasonic - SSG
Datasheet

Specifications of 2SK3042

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 1mA
Input Capacitance (ciss) @ Vds
1100pF @ 10V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220D
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3042
Manufacturer:
PANASONIC
Quantity:
8 000
Part Number:
2SK3042
Manufacturer:
Panasonic
Quantity:
12 500
Power F-MOS FETs
2SK3042
Silicon N-Channel Power F-MOS FET
I Features
G Avalanche energy capacity guaranteed: EAS > 45mJ
G High-speed switching: t
G No secondary breakdown
I Applications
G Contactless relay
G Diving circuit for a solenoid
G Driving circuit for a motor
G Control equipment
G Switching power supply
I Absolute Maximum Ratings
*
I Electrical Characteristics
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
L = 0.1mH, I
Parameter
Parameter
L
= 8A, V
DC
Pulse
T
Ta = 25°C
C
DD
= 25°C
= 50V, 1 pulse
f
= 30ns
V
V
I
I
EAS
P
T
T
I
I
V
V
R
| Y
V
C
C
C
t
t
t
t
Symbol
Symbol
d(on)
r
d(off)
f
D
DP
DSS
GSS
D
ch
stg
DS(on)
iss
oss
rss
DSS
GSS
DSS
th
DSF
(T
fs
|
*
C
(T
= 25°C)
C
= 25°C)
V
V
I
V
V
V
I
V
V
V
−55 to +150
D
DR
DS
GS
DS
GS
DS
DS
GS
DD
Ratings
= 1mA, V
= 8A, V
= 200V, V
= ±20V, V
= 10V, I
= 10V, I
= 10V, I
= 10V, V
= 10V, I
= 100V, R
250
±20
±14
150
±7
45
35
2
GS
Conditions
GS
D
D
D
D
GS
= 1mA
= 5A
= 5A
= 0
= 5A
GS
DS
L
= 0
= 0, f = 1MHz
= 20Ω
= 0
= 0
Unit
mJ
°C
°C
W
V
V
A
A
min
250
2.7
1
1
9.9
2
±0.3
3
1100
2.54
5.08
200
130
typ
0.4
4.7
0.8
60
20
20
30
1.6
1.4
±0.1
±0.2
±0.30
±0.50
±0.2
φ 3.2
±0.1
TO-220D-A1 Package
max
−1.7
0.1
0.6
±1
5
4.6
±0.2
0.55
1: Gate
2: Drain
3: Source
unit: mm
2.9
2.6
±0.15
Unit
mA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
±0.2
±0.1
195

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2SK3042 Summary of contents

Page 1

... Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET I Features G Avalanche energy capacity guaranteed: EAS > 45mJ G High-speed switching 30ns secondary breakdown I Applications G Contactless relay G Diving circuit for a solenoid G Driving circuit for a motor G Control equipment G Switching power supply I Absolute Maximum Ratings Parameter ...

Page 2

... C 6.6 V =10V DS I =3A D 6.4 6.2 6.0 5.8 5.6 5.4 5.2 5 100 125 150 ( ˚C ) Case temperature  =10V DS T =25˚ Drain current 2SK3042  =25˚ =15V GS 10V 40W 2 5. Drain to source voltage V DS  =25V DS I =1mA 100 ...

Page 3

... Power F-MOS FETs (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 10 1 –1 10 –2 10 –4 –3 –2 –  t th(t) (1) ( Time 2SK3042 4 10 197 ...

Page 4

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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