IRF530S Vishay, IRF530S Datasheet
IRF530S
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IRF530S Summary of contents
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... SiHF530STL-E3 IRF530STRL SiHF530STL = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω (see fig. 12 ≤ 175 ° IRF530S, SiHF530S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF530STRRPbF a a SiHF530STR- IRF530STRR a a SiHF530STR SYMBOL LIMIT V 100 DS V ± ...
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... IRF530S, SiHF530S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Fig Typical Output Characteristics, T Document Number: 91020 S-82996-Rev. A, 19-Jan-09 4 µs Pulse Width ° 91020_03 = 25 ° µs Pulse Width T = 175 ° 91020_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF530S, SiHF530S Vishay Siliconix ° ° 175 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF530S, SiHF530S Vishay Siliconix 1400 MHz iss gs 1200 rss oss ds 1000 800 600 400 200 Drain-to-Source Voltage ( 91020_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91020_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91020_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91020 S-82996-Rev. A, 19-Jan-09 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF530S, SiHF530S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF530S, SiHF530S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91020_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 200 Top ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig For N-Channel IRF530S, SiHF530S Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...