IRF840L Vishay, IRF840L Datasheet

MOSFET N-CH 500V 8A TO-262

IRF840L

Manufacturer Part Number
IRF840L
Description
MOSFET N-CH 500V 8A TO-262
Manufacturer
Vishay
Datasheet

Specifications of IRF840L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF840L

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
Document Number: 91069
S-83030-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 8.0 A, dI/dt ≤ 100 A/µs, V
= 50 V, starting T
(TO-262)
(Ω)
I
2
PAK
a
J
= 25 °C, L = 14 mH, R
G
D
c
a
a
S
b
V
DD
GS
≤ V
= 10 V
G
DS
, T
N-Channel MOSFET
J
Single
500
≤ 150 °C.
9.3
63
32
G
= 25 Ω, I
D
S
C
Power MOSFET
0.85
= 25 °C, unless otherwise noted
V
GS
AS
at 10 V
= 8.0 A (see fig. 12).
T
T
C
for 10 s
C
= 100 °C
= 25 °C
T
T
C
C
I
IRF840LPbF
SiHF840L-E3
2
= 100 °C
= 25 °C
PAK (TO-262)
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance.
The
because of its low internal connection resistance and can
dissipate up to 2.0 W.
I
2
I
2
PAK
PAK
SYMBOL
(TO-262) is suitable for high current applications
T
dV/dt
(TO-262) is a power package capable of
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRF840L, SiHF840L
- 55 to + 150
LIMIT
300
± 20
500
510
125
8.0
5.1
1.0
8.0
3.5
32
13
50
d
Vishay Siliconix
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
V
A
A
1

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IRF840L Summary of contents

Page 1

... ° 100 ° ° 100 °C C for Ω 8.0 A (see fig. 12 ≤ 150 ° IRF840L, SiHF840L Vishay Siliconix (TO-262 power package capable of (TO-262) is suitable for high current applications SYMBOL LIMIT V 500 DS V ± 8 5 1.0 E 510 AS I 8.0 ...

Page 2

... IRF840L, SiHF840L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... V Drain-to-Source Voltage ( 91069_02 Fig Typical Output Characteristics, T Document Number: 91069 S-83030-Rev. A, 19-Jan-09 4 µs Pulse Width ° 91069_03 = 25 ° µs Pulse Width T = 150 °C C 91069_04 = 150 °C C IRF840L, SiHF840L Vishay Siliconix ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF840L, SiHF840L Vishay Siliconix 2500 MHz iss 2000 rss oss ds 1500 1000 500 Drain-to-Source Voltage ( 91069_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 400 250 100 Total Gate Charge (nC) 91069_06 G Fig Typical Gate Charge vs. Drain-to-Source Voltage www.vishay.com Shorted iss C oss rss 91069_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91069 S-83030-Rev. A, 19-Jan-09 125 150 Single Pulse (Thermal Response 0 Rectangular Pulse Duration ( Fig. 12b - Unclamped Inductive Waveforms IRF840L, SiHF840L Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit V ...

Page 6

... IRF840L, SiHF840L Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 1200 1000 800 600 400 200 100 50 Starting T , Junction Temperature (°C) 91069_12c J Fig Maximum Avalanche Energy vs. Drain Current I D Top 3.6 A 5.1 A Bottom 8.0 A 125 150 Current regulator Same type as D.U.T. ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRF840L, SiHF840L Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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