IRF9530S Vishay, IRF9530S Datasheet
IRF9530S
Specifications of IRF9530S
Available stocks
Related parts for IRF9530S
IRF9530S Summary of contents
Page 1
... SiHF9530STL-E3 IRF9530STRL SiHF9530STL = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω (see fig. 12 ≤ 175 ° IRF9530S, SiHF9530S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF9530STRRPbF a a SiHF9530STR- IRF9530STRR a a SiHF9530STR SYMBOL LIMIT V - 100 DS V ± ...
Page 2
... IRF9530S, SiHF9530S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
Page 3
... Fig Typical Output Characteristics, T Document Number: 91077 S09-0017-Rev. A, 19-Jan- µs Pulse Width ° 91077_03 = 25 ° 4 µs Pulse Width T = 175 ° 91077_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF9530S, SiHF9530S Vishay Siliconix ° ° 10 175 C 20 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
Page 4
... IRF9530S, SiHF9530S Vishay Siliconix 1800 MHz iss gs 1500 rss oss ds 1200 C 900 C 600 300 Drain-to-Source Voltage ( 91077_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91077_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 oss rss 10 91076_07 Fig Typical Source-Drain Diode Forward Voltage ...
Page 5
... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91077 S09-0017-Rev. A, 19-Jan-09 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF9530S, SiHF9530S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
Page 6
... IRF9530S, SiHF9530S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91077_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 1200 Top ...
Page 7
... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRF9530S, SiHF9530S Vishay Siliconix + + P. www.vishay.com 7 ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...