IRF9640S Vishay, IRF9640S Datasheet

MOSFET P-CH 200V 11A D2PAK

IRF9640S

Manufacturer Part Number
IRF9640S
Description
MOSFET P-CH 200V 11A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF9640S

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9640S

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Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91087
S09-0046-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 11 A, dI/dt ≤ 150 A/µs, V
G D
= - 50 V, starting T
(Ω)
D
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 8.7 mH, R
c
a
V
b
DD
GS
≤ V
D
IRF9640SPbF
SiHF9640S-E3
IRF9640S
SiHF9640S
= - 10 V
e
2
PAK (TO-263)
G
DS
, T
P-Channel MOSFET
e
Single
- 200
J
7.1
44
27
≤ 150 °C.
G
S
D
= 25 Ω, I
C
Power MOSFET
V
= 25 °C, unless otherwise noted
0.50
GS
at - 10 V
AS
= - 11 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRF9640STRLPbF
SiHF9640STL-E3
IRF9640STRL
SiHF9640STL
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
PAK (TO-263)
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
SYMBOL
a
a
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
a
I
DM
AR
DS
GS
AS
AR
D
a
D
stg
IRF9640S, SiHF9640S
design,
- 55 to + 150
D
IRF9640STRRPbF
SiHF9640STR-E3
IRF9640STRR
SiHF9640STR
2
LIMIT
0.025
- 200
300
± 20
- 6.8
- 5.0
PAK (TO-263)
- 11
- 44
700
- 11
125
1.0
3.0
13
low
Vishay Siliconix
d
on-resistance
a
a
www.vishay.com
a
a
UNIT
W/°C
RoHS*
COMPLIANT
V/ns
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRF9640S Summary of contents

Page 1

... SiHF9640STL-E3 IRF9640STRL SiHF9640STL = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω (see fig. 12 ≤ 150 ° IRF9640S, SiHF9640S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF9640STRRPbF a a SiHF9640STR- IRF9640STRR a a SiHF9640STR SYMBOL LIMIT V - 200 DS V ± ...

Page 2

... IRF9640S, SiHF9640S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... DS , 91087_02 Fig Typical Output Characteristics, T Document Number: 91087 S09-0046-Rev. A, 19-Jan- µs Pulse Width ° 91087_03 = 25 ° 4 µs Pulse Width T = 150 ° 91087_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF9640S, SiHF9640S Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF9640S, SiHF9640S Vishay Siliconix 2400 MHz iss gs 2000 rss oss ds 1600 1200 800 400 Drain-to-Source Voltage ( 91087_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 100 Total Gate Charge (nC) 91087_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 91087_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91087 S09-0046-Rev. A, 19-Jan-09 100 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF9640S, SiHF9640S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF9640S, SiHF9640S Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 1600 Top 1200 Bottom 800 400 100 50 Starting T , Junction Temperature (°C) 91087_12c 4 7 125 150 Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRF9640S, SiHF9640S Vishay Siliconix + + P. www.vishay.com 7 ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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