IRF840LCS Vishay, IRF840LCS Datasheet

MOSFET N-CH 500V 8A D2PAK

IRF840LCS

Manufacturer Part Number
IRF840LCS
Description
MOSFET N-CH 500V 8A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF840LCS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.85 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
3.1 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF840LCS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF840LCS
Manufacturer:
IR
Quantity:
600
Part Number:
IRF840LCS
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF840LCSPBF
Quantity:
1 000
Company:
Part Number:
IRF840LCSPBF
Quantity:
30 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
e. Uses IRF840LC, SiHF840LC data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91068
S09-0071-Rev. A, 02-Feb-09
I
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
2
PAK
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 8.0 A, dI/dt ≤ 100 A/µs, V
(TO-262)
(Ω)
J
= 25 °C, L = 14 mH, R
G
D
S
a
G
a, e
D
D
2
PAK (TO-263)
S
c, e
a
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
b, e
DD
V
GS
G
≤ V
D
IRF840LCSPbF
SiHF840LCS-E3
IRF840LCS
SiHF840LCS
= 25 Ω, I
= 10 V
2
PAK (TO-263)
DS
, T
G
Single
J
500
N-Channel MOSFET
≤ 150 °C.
39
10
19
AS
= 8.0 A (see fig. 12).
C
Power MOSFET
D
S
= 25 °C, unless otherwise noted
V
0.85
GS
at 10 V
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
-
-
IRF840LCSTRR
SiHF840LCSTR
= 100 °C
= 25 °C
2
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
• Reduced C
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge then conventional Power
MOSFETs. Utilizing the new LCDMOS (low charge device
Power MOSFETs) technology, the device improvements are
achieved without added product cost, allowing for reduced
gate drive requirements and total system savings. In
addition, reduced switching losses and improved efficiency
are achievable in a variety of high frequency applications.
Frequencies of a few MHz at high current are possible using
the new low charge Power MOSFETs.
These device improvements combined with the proven
ruggedness
MOSFETs offer the designer a new power transistor
standard for switching applications.
PAK (TO-263)
SYMBOL
T
dV/dt
a
a
J
iss
V
V
E
E
I
I
P
, T
I
DM
AR
and
DS
GS
AS
AR
D
D
, C
stg
oss
GS
reliability
, C
Rating
rss
- 55 to + 150
I
IRF840LCLPbF
SiHF840LCL-E3
IRF840LCL
SiHF840LCL
2
PAK (TO-262)
LIMIT
300
that
± 30
500
510
125
8.0
5.1
1.0
8.0
3.1
3.5
28
13
Vishay Siliconix
d
characterize
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Power
Available
1

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IRF840LCS Summary of contents

Page 1

... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL PRODUCT SUMMARY V ( (Ω DS(on (Max.) (nC (nC (nC) gd Configuration PAK (TO-263) I PAK (TO-262 ORDERING INFORMATION 2 Package D PAK (TO-263) IRF840LCSPbF Lead (Pb)-free SiHF840LCS-E3 IRF840LCS SnPb SiHF840LCS Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ...

Page 2

... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted V GS Top 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4 Drain-to-Source Voltage (V) 91068_01 DS Fig Typical Output Characteristics V GS Top 8.0 V 7.0 V 6.0 V 5 Bottom 4 Drain-to-Source Voltage ( 91068_02 Fig Typical Output Characteristics Document Number: 91068 S09-0071-Rev ...

Page 4

... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix 2400 MHz iss 2000 rss oss 1600 1200 800 400 Drain-to-Source Voltage ( 91068_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 250 100 Total Gate Charge (nC) 91068_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss ...

Page 5

... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL 8.0 6.0 4.0 2.0 0 100 T , Case Temperature (°C) 91068_09 C Fig Maximum Drain Current vs. Case Temperature 0.5 0.2 0.1 0.1 0.05 0.02 0. 91068_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91068 S09-0071-Rev ...

Page 6

... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 1200 1000 800 600 400 200 100 Starting T , Junction Temperature (°C) 91068_12c Top 3.6 A 5.1 A Bottom 8.0 A 125 150 Current regulator Same type as D.U.T. 50 kΩ ...

Page 7

... IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL D.U Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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