IRF740AL Vishay, IRF740AL Datasheet
IRF740AL
Specifications of IRF740AL
Available stocks
Related parts for IRF740AL
IRF740AL Summary of contents
Page 1
... 1.6 mm from case. e. Uses IRF740A, SiHF740A data and test conditions containing terminations are not RoHS compliant, exemptions may apply Document Number: 91052 S-83029-Rev. A, 19-Jan-09 IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Power MOSFET FEATURES • Low Gate Charge Q 400 Requirement 0.55 • Improved Gate, Avalanche and Dynamic dV/dt ...
Page 2
... IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
Page 3
... Top 8 6.0 V 5.5 V 5.0 V Bottom 4 0.1 0 Drain-to-Source Voltage ( 91052_02 Fig Typical Output Characteristics Document Number: 91052 S-83029-Rev. A, 19-Jan-09 IRF740AS, IRF740AL, SiHF740AS, SiHF740AL 10 4 µs Pulse Width ° 91052_03 3.0 2.5 2.0 1.5 4.5 V 1.0 0.5 20 µs Pulse Width T = 150 ° ...
Page 4
... IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Vishay Siliconix MHz iss rss oss Drain-to-Source Voltage ( 91052_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 200 Total Gate Charge (nC) 91052_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 91052_07 Fig Typical Source-Drain Diode Forward Voltage ...
Page 5
... Single Pulse -2 10 (Thermal Response 91052_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91052 S-83029-Rev. A, 19-Jan-09 IRF740AS, IRF740AL, SiHF740AS, SiHF740AL 125 150 - Rectangular Pulse Duration ( Driver + - Vishay Siliconix D.U. ...
Page 6
... IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Vishay Siliconix 1400 1200 1000 800 600 400 200 100 Starting T , Junction Temperature (°C) 91052_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 580 I D Top 4.5 A 6.3 A 560 Bottom ...
Page 7
... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91052. Document Number: 91052 S-83029-Rev. A, 19-Jan-09 IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...