IRFBC30L Vishay, IRFBC30L Datasheet
IRFBC30L
Specifications of IRFBC30L
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IRFBC30L Summary of contents
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... The PAK is suitable for high current applications because of its N-Channel MOSFET low internal connection resistance and can dissipate typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L available for low-profile applications PAK (TO-263) IRFBC30STRLPbF SiHFBC30STL- ° ...
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... IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). For recommended footprint and soldering techniques refer to application note #AN-994. SPECIFICATIONS °C, unless otherwise noted ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Output Characteristics Document Number: 91111 S09-0038-Rev. A, 19-Jan-09 IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Fig Normalized On-Resistance vs. Temperature Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...
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... IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91111 S09-0038-Rev. A, 19-Jan-09 ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91111 S09-0038-Rev. A, 19-Jan-09 IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L + Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...
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... IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91111 S09-0038-Rev ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91111. Document Number: 91111 S09-0038-Rev. A, 19-Jan-09 IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...