IRF610STRR Vishay, IRF610STRR Datasheet

MOSFET N-CH 200V 3.3A D2PAK

IRF610STRR

Manufacturer Part Number
IRF610STRR
Description
MOSFET N-CH 200V 3.3A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF610STRR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.2nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91024
S09-0071-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
G D
(nC)
(nC)
(V)
≤ 3.3 A, dI/dt ≤ 70 A/µs, V
= 50 V, starting T
D
(Ω)
S
2
PAK (TO-263)
a
J
= 25 °C, L = 8.8 mH, R
c
a
a
DD
b
V
≤ V
GS
D
IRF610SPbF
SiHF610S-E3
IRF610S
SiHF610S
e
= 10 V
DS
G
2
PAK (TO-263)
, T
N-Channel MOSFET
J
e
Single
≤ 150 °C.
200
8.2
1.8
4.5
G
D
S
= 25 Ω, I
C
Power MOSFET
= 25 °C, unless otherwise noted
V
1.5
GS
AS
at 10 V
= 3.3 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRF610STRLPbF
SiHF610STL-E3
IRF610STRL
SiHF610STL
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
PAK (TO-263)
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
a
a
SYMBOL
T
dV/dt
a
J
V
V
E
E
I
a
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRF610S, SiHF610S
design,
- 55 to + 150
D
IRF610STRRPbF
SiHF610STR-E3
IRF610STRR
SiHF610STR
2
LIMIT
0.025
300
± 20
0.29
PAK (TO-263)
200
3.3
2.1
3.3
3.6
3.0
5.0
10
64
36
low
Vishay Siliconix
d
on-resistance
a
a
a
www.vishay.com
a
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRF610STRR Summary of contents

Page 1

... 100 ° ° °C A for Ω 3.3 A (see fig. 12 ≤ 150 °C. J IRF610S, SiHF610S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF610STRRPbF a a SiHF610STR- IRF610STRR a a SiHF610STR SYMBOL LIMIT V 200 DS V ± 3 2 0.29 0.025 3 3 3.0 dV/dt 5.0 ...

Page 2

... IRF610S, SiHF610S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient c (PCB Mount) Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... C 3.5 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 20 µs Pulse Width T = 150 ° 91024_04 Fig Normalized On-Resistance vs. Temperature = 150 °C C IRF610S, SiHF610S Vishay Siliconix 20 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 100 120 140 160 T Junction Temperature (° ...

Page 4

... IRF610S, SiHF610S Vishay Siliconix 300 MHz iss gs 250 rss oss 200 C 150 C 100 Drain-to-Source Voltage ( 91024_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 100 Total Gate Charge (nC) 91024_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss oss rss 10 1 91024_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91024 S09-0071-Rev. A, 02-Feb-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF610S, SiHF610S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF610S, SiHF610S Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 140 120 100 100 Starting T , Junction Temperature (°C) 91024_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D Top 1.5 A 2.1 A Bottom 3.3 A 125 150 Current regulator Same type as D.U.T. ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91024. Document Number: 91024 S09-0071-Rev ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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