IRF840STRL Vishay, IRF840STRL Datasheet

MOSFET N-CH 500V 8A D2PAK

IRF840STRL

Manufacturer Part Number
IRF840STRL
Description
MOSFET N-CH 500V 8A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF840STRL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF840STRLPBF
Manufacturer:
VISHAY
Quantity:
220
Part Number:
IRF840STRLPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRF840STRLPBF
Quantity:
12 000
Company:
Part Number:
IRF840STRLPBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91071
S-81432-Rev. A, 07-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 8.0 A, dI/dt ≤ 100 A/µs, V
= 50 V, starting T
G D
(Ω)
D
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 14 mH, R
c
a
b
DD
V
GS
≤ V
D
IRF840SPbF
SiHF840S-E3
IRF840S
SiHF840S
e
= 10 V
2
PAK (TO-263)
DS
G
, T
N-Channel MOSFET
e
Single
J
500
≤ 150 °C.
9.3
63
32
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.85
GS
AS
at 10 V
= 8.0 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRF840STRLPbF
SiHF840STL-E3
IRF840STR
SiHF840STL
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirement
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
PAK (TO-263)
2
PAK (TO-263)
D
2
PAK (TO-263)
a
L
a
SYMBOL
T
dV/dt
a
J
V
V
E
E
I
a
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
is suitable for high current applications
is a surface mount power package
IRF840S, SiHF840S
design,
- 55 to + 150
D
IRF840STRRPbF
SiHF840STR-E3
IRF840STR
SiHF840STR
2
LIMIT
0.025
300
PAK (TO-263)
± 20
500
510
125
8.0
5.1
1.0
8.0
3.1
3.5
32
13
low
Vishay Siliconix
d
on-resistance
a
a
a
www.vishay.com
a
UNIT
W/°C
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRF840STRL Summary of contents

Page 1

... S on-resistance in any existing surface mount package. The 2 D PAK (TO-263) N-Channel MOSFET because of its low internal connection resistance and can dissipate typical surface mount application PAK (TO-263) IRF840STRLPbF SiHF840STL-E3 IRF840STR SiHF840STL = 25 °C, unless otherwise noted ° 100 ° ...

Page 2

... IRF840S, SiHF840S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... DS , 91071_02 Fig Typical Output Characteristics, T Document Number: 91071 S-81432-Rev. A, 07-Jul-08 4 µs Pulse Width °C C 91071_03 = 25 ° µs Pulse Width T = 150 °C C 91071_04 = 150 °C C IRF840S, SiHF840S Vishay Siliconix ° 150 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...

Page 4

... IRF840S, SiHF840S Vishay Siliconix 2500 MHz iss 2000 rss oss ds 1500 1000 500 Drain-to-Source Voltage ( 91071_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 400 250 100 Total Gate Charge (nC) 91071_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss rss 91071_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91071 S-81432-Rev. A, 07-Jul-08 125 150 Single Pulse (Thermal Response 0 Rectangular Pulse Duration (S) 1 IRF840S, SiHF840S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF840S, SiHF840S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 1200 1000 800 600 400 200 100 Starting T , Junction Temperature (° ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91071. ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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