IRF9530STRR Vishay, IRF9530STRR Datasheet

MOSFET P-CH 100V 12A D2PAK

IRF9530STRR

Manufacturer Part Number
IRF9530STRR
Description
MOSFET P-CH 100V 12A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF9530STRR

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 7.2A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
860pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9530STRRPBF
Manufacturer:
IR
Quantity:
20 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91077
S09-0017-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 12 A, dI/dt ≤ 140 A/µs, V
= - 25 V, starting T
G D
(Ω)
D
S
2
PAK (TO-263)
a
a
J
= 25 °C, L = 4.2 mH, R
c
a
V
b
DD
GS
≤ V
D
IRF9530SPbF
SiHF9530S-E3
IRF9530S
SiHF9530S
= - 10 V
e
2
G
PAK (TO-263)
DS
, T
P-Channel MOSFET
e
Single
- 100
J
6.8
38
21
≤ 175 °C.
G
S
D
= 25 Ω, I
C
Power MOSFET
V
= 25 °C, unless otherwise noted
0.30
GS
at - 10 V
AS
= - 12 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
D
IRF9530STRLPbF
SiHF9530STL-E3
IRF9530STRL
SiHF9530STL
= 100 °C
= 25 °C
2
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
PAK (TO-263)
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
SYMBOL
a
a
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
a
I
DM
AR
DS
GS
AS
AR
D
a
D
stg
IRF9530S, SiHF9530S
design,
- 55 to + 175
D
IRF9530STRRPbF
SiHF9530STR-E3
IRF9530STRR
SiHF9530STR
2
LIMIT
0.025
- 100
300
± 20
- 8.2
0.59
- 5.5
PAK (TO-263)
- 12
- 48
400
- 12
8.8
3.7
88
low
Vishay Siliconix
d
on-resistance
a
a
www.vishay.com
a
a
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

Related parts for IRF9530STRR

IRF9530STRR Summary of contents

Page 1

... 100 ° ° °C A for Ω (see fig. 12 ≤ 175 ° IRF9530S, SiHF9530S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF9530STRRPbF a a SiHF9530STR- IRF9530STRR a a SiHF9530STR SYMBOL LIMIT V - 100 DS V ± 8 0.59 0.025 E 400 8 3.7 dV/ 175 J ...

Page 2

... IRF9530S, SiHF9530S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... Document Number: 91077 S09-0017-Rev. A, 19-Jan- µs Pulse Width ° 91077_03 = 25 ° 4 µs Pulse Width T = 175 ° 91077_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF9530S, SiHF9530S Vishay Siliconix ° ° 10 175 C 20 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3.0 ...

Page 4

... IRF9530S, SiHF9530S Vishay Siliconix 1800 MHz iss gs 1500 rss oss ds 1200 C 900 C 600 300 Drain-to-Source Voltage ( 91077_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91077_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 oss rss 10 91076_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91077 S09-0017-Rev. A, 19-Jan-09 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF9530S, SiHF9530S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRF9530S, SiHF9530S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91077_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 1200 Top ...

Page 7

... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91077. ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords