IRF9530STRR Vishay, IRF9530STRR Datasheet
IRF9530STRR
Specifications of IRF9530STRR
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IRF9530STRR Summary of contents
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... 100 ° ° °C A for Ω (see fig. 12 ≤ 175 ° IRF9530S, SiHF9530S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF9530STRRPbF a a SiHF9530STR- IRF9530STRR a a SiHF9530STR SYMBOL LIMIT V - 100 DS V ± 8 0.59 0.025 E 400 8 3.7 dV/ 175 J ...
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... IRF9530S, SiHF9530S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Document Number: 91077 S09-0017-Rev. A, 19-Jan- µs Pulse Width ° 91077_03 = 25 ° 4 µs Pulse Width T = 175 ° 91077_04 = 175 °C Fig Normalized On-Resistance vs. Temperature C IRF9530S, SiHF9530S Vishay Siliconix ° ° 10 175 C 20 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3.0 ...
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... IRF9530S, SiHF9530S Vishay Siliconix 1800 MHz iss gs 1500 rss oss ds 1200 C 900 C 600 300 Drain-to-Source Voltage ( 91077_05 Fig Typical Capacitance vs. Drain-to-Source Voltage Total Gate Charge (nC) 91077_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 oss rss 10 91076_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91077 S09-0017-Rev. A, 19-Jan-09 125 150 175 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF9530S, SiHF9530S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF9530S, SiHF9530S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91077_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 1200 Top ...
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... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91077. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...