IRFBC30ASTRR Vishay, IRFBC30ASTRR Datasheet

MOSFET N-CH 600V 3.6A D2PAK

IRFBC30ASTRR

Manufacturer Part Number
IRFBC30ASTRR
Description
MOSFET N-CH 600V 3.6A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFBC30ASTRR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
74W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
e. Uses IRFBC30A/SiHFBC30A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91109
S-81412-Rev. A, 07-Jul-08
I
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetiitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
2
PAK (TO-262)
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 3.6 A, dI/dt ≤ 170 A/µs, V
(Ω)
J
= 25 °C, L = 46 mH, R
a
D
G
2
a, e
PAK (TO-263)
D
S
IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL
c, e
D
IRFBC30ASPbF
SiHFBC30AS-E3
IRFBC30AS
SiHFBC30AS
a
2
PAK (TO-263)
b
DD
V
GS
G
≤ V
= 25 Ω, I
= 10 V
DS
, T
G
Single
J
600
≤ 150 °C.
N-Channel MOSFET
5.4
23
11
AS
= 3.6 A (see fig. 12).
C
Power MOSFET
D
S
= 25 °C, unless otherwise noted
V
2.2
GS
D
IRFBC30ASTRLPbF
SiHFBC30ASTL-E3
IRFBC30ASTRL
SiHFBC30ASTL
at 10 V
2
PAK (TO-263)
T
for 10 s
C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Effective C
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Single Transistor Flyback
a
a
Requirement
Ruggedness
and Current
a
a
SYMBOL
D
IRFBC30ASTRRPbF
SiHFBC30ASTR-E3
IRFBC30ASTRR
SiHFBC30ASTR
T
2
dV/dt
oss
J
PAK (TO-263)
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
Specified
g
Results in Simple Drive
a
a
- 55 to + 150
a
a
LIMIT
300
± 30
0.69
600
290
3.6
2.3
3.6
7.4
7.0
14
74
d
Vishay Siliconix
I
IRFBC30ALPbF
SiHFBC30AL-E3
IRFBC30AL
SiHFBC30AL
2
PAK (TO-262)
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRFBC30ASTRR Summary of contents

Page 1

... 100 ° °C C for 3.6 A (see fig. 12). AS ≤ 150 ° Vishay Siliconix Results in Simple Drive g Specified oss PAK (TO-263) I PAK (TO-262) a IRFBC30ASTRRPbF IRFBC30ALPbF a SiHFBC30ASTR-E3 SiHFBC30AL-E3 a IRFBC30ASTRR IRFBC30AL a SiHFBC30ASTR SiHFBC30AL SYMBOL LIMIT V 600 DS V ± 3 2 0.69 E 290 dV/dt 7 ...

Page 2

... IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... PULSE WIDTH T = 150 C 0.1 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics Document Number: 91109 S-81412-Rev. A, 07-Jul-08 4.5V ° 100 4.5V ° 100 Vishay Siliconix 100 150 C ° ° 50V DS 20µs PULSE WIDTH 0.01 4.0 5.0 6.0 7 Gate-to-Source Voltage (V) GS Fig ...

Page 4

... IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix 10000 0V MHZ C iss = rss = oss = 1000 Ciss 100 Coss 10 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 3. 480V 300V 120V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...

Page 5

... V DS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91109 S-81412-Rev. A, 07-Jul-08 125 150 ° 0.001 0. Rectangular Pulse Duration (sec Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix 400 300 200 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 740 TOP 1.6A 2.3A BOTTOM 3.6A 720 700 680 660 640 ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91109. ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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