IRL530S Vishay, IRL530S Datasheet

MOSFET N-CH 100V 15A D2PAK

IRL530S

Manufacturer Part Number
IRL530S
Description
MOSFET N-CH 100V 15A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRL530S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
160 mOhm @ 9A, 5V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 5V
Input Capacitance (ciss) @ Vds
930pF @ 25V
Power - Max
3.7W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRL530S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRL530STRRPBF
Quantity:
10 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91342
S10-2476-Rev. B, 01-Nov-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 15 A, dI/dt  140 A/μs, V
G D
= 25 V, starting T
()
D
S
2
PAK (TO-263)
a
J
= 25 °C, L = 1.9 mH, R
c
a
a
b
DD
V
GS
 V
= 5.0 V
e
G
DS
, T
N-Channel MOSFET
J
e
Single
 175 °C.
100
3.8
28
14
g
D
-
-
-
IRL530S
SiHL530S
= 25 , I
D
S
2
C
PAK (TO-263)
= 25 °C, unless otherwise noted)
Power MOSFET
0.16
V
GS
AS
at 5 V
= 15 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic Level Gate Drive
• R
• 175 °C Operating Temperature
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The D
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on resistance in any existing surface mount
package. The D
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
Definition
DS(on)
2
PAK (TO-263) is a surface mount power package
Specified at V
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
stg
2
PAK (TO-263) is suitable for high current
D
SiHL530STRR-GE3
IRL530STRRPbF
SiHL530STR-E3
-
-
2
PAK (TO-263)
GS
design,
IRL530S, SiHL530S
= 4 V and 5 V
- 55 to + 175
LIMIT
0.025
300
± 10
0.59
100
290
8.8
3.7
5.5
15
11
60
15
88
low
a
a
Vishay Siliconix
d
a
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRL530S Summary of contents

Page 1

... ° 100 ° ° °C A for  (see fig. 12  175 ° IRL530S, SiHL530S Vishay Siliconix Specified and device design, low on-resistance 2 PAK (TO-263) is suitable for high current 2 D PAK (TO-263) a SiHL530STRR-GE3 a IRL530STRRPbF a SiHL530STR- SYMBOL LIMIT V 100 ...

Page 2

... IRL530S, SiHL530S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to Ambient (PCB Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91342 S10-2476-Rev. B, 01-Nov- °C Fig Typical Transfer Characteristics C = 175 °C Fig Normalized On-Resistance vs. Temperature C IRL530S, SiHL530S Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRL530S, SiHL530S Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91342 S10-2476-Rev. B, 01-Nov-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91342 S10-2476-Rev. B, 01-Nov-10 IRL530S, SiHL530S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) r d(off) f Fig. 10b - Switching Time Waveforms www ...

Page 6

... IRL530S, SiHL530S Vishay Siliconix Vary t to obtain p required I AS D.U 0. Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices Fig For N-Channel IRL530S, SiHL530S Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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