HUF76639P3 Fairchild Semiconductor, HUF76639P3 Datasheet
HUF76639P3
Specifications of HUF76639P3
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HUF76639P3 Summary of contents
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... HUF76639S3ST Unless Otherwise Specified DSS DGR , T J STG = 0.026 10V 0.027 Curves GS PACKAGE BRAND TO-220AB 76639P TO-263AB 76639S HUF76639P3, HUF76639S3S 100 100 Figure 4 DM Figures 6, 17, 18 180 D 1.2 -55 to 175 300 L 260 pkg HUF76639P3, HUF76639S3S Rev. B UNITS ...
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... SD SD MIN TYP 100 - o C (Figure 12 0.023 - 0.024 - 0.025 - - - - - - - 17 - 207 - 83 - 136 - - - - - 151 - 110 - - = 50V 1.0mA - 2 2400 - 520 - 140 MIN TYP - - - - - - - - HUF76639P3, HUF76639S3S Rev. B MAX UNITS - 250 A 100 0.026 0.027 0.028 o 0.83 C C/W 336 328 392 2 MAX UNITS 1.25 V 1.0 V 137 ns 503 nC ...
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... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY 10V 4. 100 125 T , CASE TEMPERATURE ( C CASE TEMPERATURE P DM NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS HUF76639P3, HUF76639S3S Rev. B 150 175 175 - T C 150 1 10 ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 3.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE HUF76639P3, HUF76639S3S Rev +1] DSS 150 C 10 100 10V 51A GS ...
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... JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE 50V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g GATE CURRENT 600 V = 10V 50V 51A 500 400 300 200 100 GATE TO SOURCE RESISTANCE ( ) GS FIGURE 16. SWITCHING TIME vs GATE RESISTANCE HUF76639P3, HUF76639S3S Rev. B 120 160 200 51A = 35A = 15A d(OFF d(ON ...
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... FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g( g(TH FIGURE 20. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM HUF76639P3, HUF76639S3S Rev 10V GS t OFF d(OFF 90% 10% 90% 50% ...
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... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN 18 EBREAK - 16 21 MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF76639P3, HUF76639S3S Rev. B DRAIN 2 SOURCE 3 ...
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... LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUF76639P3, HUF76639S3S Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF76639P3, HUF76639S3S Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...