IRF634NPBF Vishay, IRF634NPBF Datasheet

MOSFET N-CH 250V 8A TO-220AB

IRF634NPBF

Manufacturer Part Number
IRF634NPBF
Description
MOSFET N-CH 250V 8A TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRF634NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
435 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
620pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF634NPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF634NPBF
Manufacturer:
IR
Quantity:
20 000
Note
a. See device orientation.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91033
S-82999-Rev. A, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
I
2
DS
PAK (TO-262)
DS(on)
g
gs
gd
(Max.) (nC)
(nC)
(nC)
(V)
(Ω)
G D
G
S
D
D
S
2
PAK (TO-263)
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
SiHF634N-E3
IRF634NPbF
SiHF634N
IRF634N
TO-220
TO-220
V
GS
= 10 V
G
D
S
G
Single
250
6.5
34
16
D
N-Channel MOSFET
SiHF634NS-E3
IRF634NSPbF
2
SiHF634NS
PAK (TO-263)
IRF634NS
Power MOSFET
0.435
D
S
IRF634NSTRLPbF
SiHF634NSTL-E3
D
IRF634NSTRL
SiHF634NSTL
2
PAK (TO-263)
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF634NL, SiHF634NL) is
available for low-profile application.
2
PAK (TO-263) is suitable for high current applications
2
PAK (TO-263) is a surface mount power package
a
a
a
a
IRF634NSTRRPbF
SiHF634NSTR-E3
D
IRF634NSTRR
SiHF634NSTR
2
PAK (TO-263)
a
a
a
a
Vishay Siliconix
I
SiHF634NL-E3
2
IRF634NLPbF
PAK (TO-262)
www.vishay.com
-
-
RoHS*
COMPLIANT
Available
1

Related parts for IRF634NPBF

IRF634NPBF Summary of contents

Page 1

... TO-220 PAK (TO-263 ORDERING INFORMATION Package TO-220 IRF634NPbF Lead (Pb)-free SiHF634N-E3 IRF634N SnPb SiHF634N Note a. See device orientation containing terminations are not RoHS compliant, exemptions may apply Document Number: 91033 S-82999-Rev. A, 12-Jan-09 Power MOSFET FEATURES • Advanced Process Technology 250 • Dynamic dV/dt Rating 0.435 • ...

Page 2

... IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor b Single Pulse Avalanche Energy a Avalanche Current a Repetiitive Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) ...

Page 3

... L S die contact MOSFET symbol I S showing the integral reverse junction diode ° 4 ° 4.8 A, dI/dt = 100 A/µ Intrinsic turn-on time is negligible (turn-on is dominated 4 µs Pulse Width ° 91033_02 Vishay Siliconix MIN. TYP. MAX. - 620 - 200 ...

Page 4

... IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix ° 175 ° 0.1 4.0 5.0 6.0 7.0 V Gate-to-Source Voltage ( 91033_03 Fig Typical Transfer Characteristics 3 7 3.0 2.5 2.0 1.5 1.0 0 100 120 140 160 180 T Junction Temperature (° 91033_04 Fig Normalized On-Resistance vs. Temperature www ...

Page 5

... DS Fig Maximum Safe Operating Area Document Number: 91033 S-82999-Rev. A, 12-Jan-09 ° 1.0 1.2 0.8 91033_09 Fig Maximum Drain Current vs. Case Temperature 100 µ Vishay Siliconix 10.0 8.0 6.0 4.0 2.0 0 100 125 150 T , Case Temperature (° D.U. Pulse width ≤ 1 µs Duty factor ≤ ...

Page 6

... IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix 0.5 0.2 0.1 0.05 0.1 0.02 0. 91033_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91033_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Single Pulse ...

Page 7

... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91033. ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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