IRF634NPBF Vishay, IRF634NPBF Datasheet
IRF634NPBF
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IRF634NPBF Summary of contents
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... TO-220 PAK (TO-263 ORDERING INFORMATION Package TO-220 IRF634NPbF Lead (Pb)-free SiHF634N-E3 IRF634N SnPb SiHF634N Note a. See device orientation containing terminations are not RoHS compliant, exemptions may apply Document Number: 91033 S-82999-Rev. A, 12-Jan-09 Power MOSFET FEATURES • Advanced Process Technology 250 • Dynamic dV/dt Rating 0.435 • ...
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... IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor b Single Pulse Avalanche Energy a Avalanche Current a Repetiitive Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation (PCB Mount) ...
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... L S die contact MOSFET symbol I S showing the integral reverse junction diode ° 4 ° 4.8 A, dI/dt = 100 A/µ Intrinsic turn-on time is negligible (turn-on is dominated 4 µs Pulse Width ° 91033_02 Vishay Siliconix MIN. TYP. MAX. - 620 - 200 ...
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... IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix ° 175 ° 0.1 4.0 5.0 6.0 7.0 V Gate-to-Source Voltage ( 91033_03 Fig Typical Transfer Characteristics 3 7 3.0 2.5 2.0 1.5 1.0 0 100 120 140 160 180 T Junction Temperature (° 91033_04 Fig Normalized On-Resistance vs. Temperature www ...
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... DS Fig Maximum Safe Operating Area Document Number: 91033 S-82999-Rev. A, 12-Jan-09 ° 1.0 1.2 0.8 91033_09 Fig Maximum Drain Current vs. Case Temperature 100 µ Vishay Siliconix 10.0 8.0 6.0 4.0 2.0 0 100 125 150 T , Case Temperature (° D.U. Pulse width ≤ 1 µs Duty factor ≤ ...
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... IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix 0.5 0.2 0.1 0.05 0.1 0.02 0. 91033_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91033_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current www.vishay.com 6 Single Pulse ...
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... Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91033. ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...