IRFP254NPBF Vishay, IRFP254NPBF Datasheet
IRFP254NPBF
Specifications of IRFP254NPBF
Available stocks
Related parts for IRFP254NPBF
IRFP254NPBF Summary of contents
Page 1
... The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of N-Channel MOSFET TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247 IRFP254NPbF SiHFP254N-E3 IRFP254N SiHFP254N = 25 °C, unless otherwise noted ° ...
Page 2
... IRFP254N, SiHFP254N Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
Page 3
... Fig Typical Output Characteristics Document Number: 91213 S09-0006-Rev. A, 19-Jan-09 100 100 4.0 3.0 2.0 4.5 V 1.0 0.0 10 100 IRFP254N, SiHFP254N Vishay Siliconix 175 ° ° µs PULSE WIDTH 4.0 5.0 6.0 7.0 8 Gate-to-Source Voltage (V) Fig Typical Transfer Characteristics -60 -40 - 100 120 140 160 Junction Temperature ( ° ...
Page 4
... IRFP254N, SiHFP254N Vishay Siliconix 4000 iss = rss = oss = 3000 C iss 2000 C oss 1000 C rss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 200 125 Total Gate Charge (nC) Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 100 MHz SHORTED 10 1 0.1 1000 100 Fig Typical Source-Drain Diode Forward Voltage ...
Page 5
... RESPONSE) 0.02 0.01 0.01 0.00001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91213 S09-0006-Rev. A, 19-Jan-09 125 150 175 0.0001 0.001 Rectangular Pulse Duration (s) IRFP254N, SiHFP254N Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...
Page 6
... IRFP254N, SiHFP254N Vishay Siliconix D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver + - Fig. 12b - Unclamped Inductive Waveforms 600 TOP 500 BOTTOM 400 300 200 100 100 125 Starting Junction Temperature (°C) Fig ...
Page 7
... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91213. Document Number: 91213 S09-0006-Rev ...
Page 8
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...