IRFP450NPBF Vishay, IRFP450NPBF Datasheet
IRFP450NPBF
Specifications of IRFP450NPBF
Related parts for IRFP450NPBF
IRFP450NPBF Summary of contents
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... Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Two Transistor Forward S • Half Bridge and Full Bridge N-Channel MOSFET • PFC Boost TO-247 IRFP450NPbF SiHFP450N-E3 IRFP450N SiHFP450N = 25 °C, unless otherwise noted ° ...
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... IRFP450N, SiHFP450N Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... Fig Typical Output Characteristics Document Number: 91232 S09-0006-Rev. B, 19-Jan-09 100 ° 0 3.0 2.5 2.0 1.5 1.0 0.5 ° 0.0 10 Fig Normalized On-Resistance vs. Temperature IRFP450N, SiHFP450N Vishay Siliconix ° 150 ° 50V DS 20μs PULSE WIDTH 6.0 7.0 8.0 9 Gate-to-Source Voltage (V) GS Fig ...
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... IRFP450N, SiHFP450N Vishay Siliconix 100000 0V MHZ C iss = rss = C gd 10000 C oss = Ciss 1000 Coss 100 10 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 14A 400V 250V 100V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...
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... RESPONSE) 0.01 0.01 0.00001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91232 S09-0006-Rev. B, 19-Jan-09 125 150 ° SINGLE PULSE 0.0001 0.001 t , Rectangular Pulse Duration (sec) 1 IRFP450N, SiHFP450N Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig ...
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... IRFP450N, SiHFP450N Vishay Siliconix D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver + - 300 TOP 250 BOTTOM 200 150 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91232. Document Number: 91232 S09-0006-Rev ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...