IRCZ24PBF Vishay, IRCZ24PBF Datasheet
IRCZ24PBF
Specifications of IRCZ24PBF
Related parts for IRCZ24PBF
IRCZ24PBF Summary of contents
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HEXFET Power MOSFET l Dynamic dv/dt Rating Current Sense l 175°C Operating Temperature l Fast Switching l l Ease of Paralleling Simple Drive Requirements l Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination ...
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IRCZ24 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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V , Drain-to-Source Voltage (Volts) DS Fig. 1 Typical Output Characteristics, T =25° Gate-to-Source Voltage (Volts) DS Fig. 3 Typical Transfer Characteristics V , Drain-to-Source Voltage (Volts) DS Fig. 2 Typical Output Characteristics, T =175° ...
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IRCZ24 V , Drain-to-Source Voltage (Volts) DS Fig. 5 Typical Capacitance vs. Drain-to- Source Voltage V , Source-to-Drain Voltage (Volts) SD Fig. 7 Typical Source-Drain Diode Forward Voltage C Total Gate Charge (nC) G Fig. 6 Typical Gate ...
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T , Case Temperature (°C) C Fig. 9 Maximum Drain Current vs. Case Temperature Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case t , Rectiangular Pulse Duration (seconds) 1 Starting T , Junction Temperature (°C) J Fig. 12c Maximum Avalanche ...
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IRCZ24 T , Junction Temperature (°C) J Fig. 15 Typical HEXSense Ratio vs. Junction Temperature V , Gate-to-Source Voltage (Volts) GS Fig. 17 Typical HEXSense Ratio vs. Gate Voltage Mechanical drawings, Appendix A Part marking information, Appendix B Test Circuit ...