IRCZ34PBF Vishay, IRCZ34PBF Datasheet

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IRCZ34PBF

Manufacturer Part Number
IRCZ34PBF
Description
MOSFET N-CH 60V 30A TO-220-5
Manufacturer
Vishay
Series
HEXFET®r
Datasheet

Specifications of IRCZ34PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Current Sensing
Rds On (max) @ Id, Vgs
50 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
88W
Mounting Type
Through Hole
Package / Case
TO-220-5 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRCZ34PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRCZ34PBF
Manufacturer:
FUJI
Quantity:
20 000
l
l
l
l
l
l
HEXFET
Description
** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSence device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
dv/dt
T
T
R
R
R
DM
D
D
AS
J
STG
D
GS
@ T
@ T
JC
CS
JA
Dynamic dv/dt Rating
Current Sense
175°C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
@T
C
C
C
= 25°C
= 100°C
= 25°C
®
Power MOSFET
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Soldering Temperature, for 10 seconds
Parameter
Parameter
GS
GS
@ 10V
@ 10V
Min.
300 (1.6mm from case)
Max.
0.50
10 lbf•in (1.1 N•m)
-55 to + 175
Max.
0.59
120
±20
4.5
30
21
88
15
Units
R
1.7
62
TO-220 HexSense
DS(on)
IRCZ34
V
DSS
I
D
= 30A
= 0.050
PD - 9.590A
= 60V
Units
°C/W
W/°C
mJ
°C
W
A
V
A
C-7

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IRCZ34PBF Summary of contents

Page 1

HEXFET Power MOSFET Dynamic dv/dt Rating l l Current Sense 175°C Operating Temperature l Fast Switching l l Ease of Paralleling Simple Drive Requirements l Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination ...

Page 2

IRCZ34 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

V , Drain-to-Source Voltage (Volts) DS Fig. 1 Typical Output Characteristics, T =25° Gate-to-Source Voltage (Volts) DS Fig. 3 Typical Transfer Characteristics IRCZ34 V , Drain-to-Source Voltage (Volts) DS Fig. 2 Typical Output Characteristics, T =175°C C ...

Page 4

IRCZ34 V , Drain-to-Source Voltage (Volts) DS Fig. 5 Typical Capacitance vs. Drain-to- Source Voltage V , Source-to-Drain Voltage (Volts) SD Fig. 7 Typical Source-Drain Diode Forward Voltage C- Total Gate Charge (nC) G Fig. 6 Typical Gate ...

Page 5

T , Case Temperature (°C) C Fig. 9 Maximum Drain Current vs. Case Temperature t , Rectiangular Pulse Duration (seconds) 1 Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case IRCZ34 Starting T , Junction Temperature (°C) J Fig. 12c Maximum ...

Page 6

IRCZ34 T , Junction Temperature (°C) J Fig. 15 Typical HEXSense Ratio vs. Junction Temperature V , Gate-to-Source Voltage (Volts) GS Fig. 17 Typical HEXSense Ratio vs. Gate Voltage Mechanical drawings, Appendix A Part marking information, Appendix B Test Circuit ...

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