IRFP460NPBF Vishay, IRFP460NPBF Datasheet

MOSFET N-CH 500V 20A TO-247AC

IRFP460NPBF

Manufacturer Part Number
IRFP460NPBF
Description
MOSFET N-CH 500V 20A TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of IRFP460NPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
124nC @ 10V
Input Capacitance (ciss) @ Vds
3540pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFP460NPBF
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91236
S09-0005-Rev. B, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 20 A, dI/dt ≤ 140 A/µs, V
TO-247
(Ω)
J
= 25 °C, L = 1.8 mH, R
G
a
D
S
c
a
a
DD
b
V
GS
≤ V
G
= 10 V
= 25 Ω, I
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
500
124
40
57
AS
= 20 A (see fig. 12).
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.24
GS
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247
IRFP460NPbF
SiHFP460N-E3
IRFP460N
SiHFP460N
= 100 °C
= 25 °C
FEATURES
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully Characterized Capacitance and Avalanche Voltage
• Effective C
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Full Bridge
• Power Factor Correction Boost
Requirement
Ruggedness
and Current
SYMBOL
T
dV/dt
oss
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
Specified
IRFP460N, SiHFP460N
g
Results in Simple Drive
- 55 to + 150
LIMIT
300
± 30
500
340
280
2.2
5.0
1.1
20
13
80
20
28
10
d
Vishay Siliconix
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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IRFP460NPBF Summary of contents

Page 1

... Lead (Pb)-free Available D APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Full Bridge S • Power Factor Correction Boost N-Channel MOSFET TO-247 IRFP460NPbF SiHFP460N-E3 IRFP460N SiHFP460N = 25 °C, unless otherwise noted ° 100 ° ...

Page 2

... IRFP460N, SiHFP460N Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Document Number: 91236 S09-0005-Rev. B, 19-Jan-09 100 10 ° 0.1 10 100 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ° 0.0 10 100 Fig Normalized On-Resistance vs. Temperature IRFP460N, SiHFP460N Vishay Siliconix T = 150 C ° J ° 50V DS 20µs PULSE WIDTH Gate-to-Source Voltage (V) GS Fig Typical Transfer Characteristics ...

Page 4

... IRFP460N, SiHFP460N Vishay Siliconix 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 20A 400V 250V 100V FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91236 S09-0005-Rev. B, 19-Jan-09 125 150 ° 0.001 0. Rectangular Pulse Duration ( Driver + - IRFP460N, SiHFP460N Vishay Siliconix D.U. 10V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFP460N, SiHFP460N Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 750 TOP 600 BOTTOM 450 300 150 100 Starting T , Junction Temperature ( 8.9A 12.6A 20A 125 150 ° Current regulator Same type as D.U.T. ...

Page 7

... Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91236 Document Number: 91236 S09-0005-Rev ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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