FDT461N Fairchild Semiconductor, FDT461N Datasheet

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FDT461N

Manufacturer Part Number
FDT461N
Description
MOSFET N-CH 100V 0.54A SOT-223
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDT461N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 Ohm @ 540mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
540mA
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
4nC @ 10V
Input Capacitance (ciss) @ Vds
74pF @ 25V
Power - Max
1.13W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDT461N
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2004 Fairchild Semiconductor Corporation
N-Channel Logic Level PowerTrench
100V, 0.4A, 2.5
Features
• r
• Q
• Low Miller Charge
• Low Q
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
R
FDT461N
D
J
DSS
GS
AS
D
Symbol
, T
JA
JA
JA
DS(ON)
Device Marking
g
(tot) = 2.36nC (Typ.), V
STG
RR
461
= 1.45 (Typ.), V
Body Diode
GATE
SOURCE
DRAIN
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.171 in
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.068 in
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.026 in
GS
GS
A
A
SOT-223
= 25
= 25
= 4.5V, I
o
= 10V
FDT461N
C
Device
o
o
C, V
C, V
D
GS
GS
= 0.4A
= 10V, R
= 4.5V, R
Parameter
T
A
(FLANGE)
DRAIN
= 25°C unless otherwise noted
JA
Package
SOT-223
JA
= 110
= 110
®
o
o
MOSFET
C/W)
C/W)
Applications
• Servo Motor Load Control
• DC-DC converters
Reel Size
13”
2
2
G
2
Tape Width
12mm
D
D
-55 to 150
Ratings
Figure 4
0.54
1.13
100
0.4
128
147
6.3
110
20
9
S
2500 units
Quantity
April 2004
FDT461N Rev. A1
mW/
Units
o
o
o
mJ
C/W
C/W
C/W
o
W
V
V
A
A
A
C
o
C

Related parts for FDT461N

FDT461N Summary of contents

Page 1

... A Parameter 10V 110 C/ 4.5V 110 C/ Package Reel Size SOT-223 April 2004 Ratings 100 20 0.54 0.4 Figure 4 6.3 1.13 9 -55 to 150 2 110 2 128 2 147 Tape Width Quantity 13” 12mm 2500 units Units mW C/W o C/W o C/W FDT461N Rev. A1 ...

Page 2

... 10V 50V 0.54A 10V 120 0.54A 0. 0.54A, dI /dt = 100A 0.54A, dI /dt = 100A Min Typ Max 100 - - - - 125 250 100 0 1.40 2.0 - 1.45 2.5 - 2.80 4 2.5 - 2.36 4.0 - 1.27 2 50V DD 0.1 0. 0.54A 1.0mA 113 - - 1. 1 Units FDT461N Rev. A1 ...

Page 3

... C) Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability V = 10V 4. 100 125 CASE TEMPERATURE ( C) A Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 150 - 125 FDT461N Rev. A1 150 ...

Page 4

... Figure 10. Normalized Gate Threshold Voltage vs = 15V 175 - 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS PULSE DURATION = 80ms DUTY CYCLE = 0.5% MAX I = 0.54A GATE TO SOURCE VOLTAGE (V) GS Voltage and Drain Current 250 - 120 JUNCTION TEMPERATURE ( C) J Junction Temperature FDT461N Rev 160 ...

Page 5

... A 200 100 120 160 0 Figure 12. Capacitance vs Drain to Source 50V 0.54A 0.5 1.0 1 GATE CHARGE (nC DUT 0.01 Figure 15. Unclamped Energy Waveforms ISS OSS RSS 0V 1MHz DRAIN TO SOURCE VOLTAGE (V) DS Voltage 2.0 2.5 BV DSS 100 V DD FDT461N Rev. A1 ...

Page 6

... Figure 16. Gate Charge Test Circuit Figure 18. Switching Time Test Circuit ©2004 Fairchild Semiconductor Corporation (Continued DUT g(REF) 0 Figure 17. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 19. Switching Time Waveforms Q g(TOT g(4. 4.5V GS g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDT461N Rev 10V 90% ...

Page 7

... PSPICE Electrical Model .SUBCKT FDT461N rev January 2004 1.5e- 1.1e-10 Cin 6 8 7.0e-11 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 109.7 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 5.29e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 5.71e-9 RLgate 1 9 52.9 RLdrain RLsource ...

Page 8

... SABER Electrical Model rev January 2004 template FDT461N n2,n1,n3 = m_temp number m_temp=25 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl=6.4e-11,rs=8.0e-3,ikf=0.9,trs1=2.5e-3,trs2=9.5e-6,cjo=2.2e-11,m=0.52,tt=2.9e-8,xti=0.1) dp..model dbreakmod = (rs=0.6,trs1=1.4e-3,trs2=-5e-5) dp..model dplcapmod = (cjo=3.9e-11,isl=10e-30,nl=10,m=0.67) m..model mmedmod = (type=_n,vto=1.75,kp=1.2,is=1e-30, tox=1) m..model mstrongmod = (type=_n,vto=2.03,kp=12,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=1.46,kp=0.02,is=1e-30, tox=1,rs=0.1) sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-5.0,voff=-2.0) sw_vcsp ...

Page 9

... CTHERM7 c7 c8 9.3e-1 CTHERM8 c8 Ambient 7 RTHERM1 Junction c2 0.5 RTHERM2 RTHERM3 RTHERM4 RTHERM5 RTHERM6 RTHERM7 RTHERM8 c8 Ambient 16 SABER Thermal Model SABER thermal model FDT461N Copper Area= 1sq.in template thermal_model th tl thermal_c th ctherm.ctherm1 3.0e-5 ctherm.ctherm2 3.2e-5 ctherm.ctherm3 2.0e-4 ctherm.ctherm4 9.6e-2 ctherm.ctherm5 8.9e-1 ctherm.ctherm6 9.1e-1 ctherm ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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