FDB6690S Fairchild Semiconductor, FDB6690S Datasheet

FDB6690S

Manufacturer Part Number

FDB6690S

Description

MOSFET N-CH 30V 42A TO-263AB

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDB6690S.pdf (6 pages)

Specifications of FDB6690S

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

15.5 mOhm @ 21A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

42A

Vgs(th) (max) @ Id

3V @ 1mA

Gate Charge (qg) @ Vgs

15nC @ 5V

Input Capacitance (ciss) @ Vds

1238pF @ 15V

Power - Max

48W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.00155 Ohms @ 10 V

Forward Transconductance Gfs (max / Min)

33 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

42 A

Power Dissipation

48 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDB6690S

Manufacturer:

FAIRCHILD

Quantity:

12 500

Current page: 1 of 6
Download datasheet (89Kb)

FDP6690S/FDB6690S

30V N-Channel PowerTrench SyncFET

General Description

This MOSFET is designed to replace a single MOSFET

and parallel Schottky diode in synchronous DC:DC

power supplies.

maximize power conversion efficiency, providing a low

monolithic SyncFET technology.

the FDP6690S/FDB6690S as the low-side switch in a

synchronous rectifier is indistinguishable from the

performance of the FDP6035AL/FDB6035AL in parallel

with a Schottky diode.

2001 Fairchild Semiconductor Corporation

DS(ON)

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

DSS

GSS

, T

Device Marking

integrated

STG

FDB6690S

FDP6690S

and low gate charge. The FDP6690S includes

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Total Power Dissipation @ T

Operating and Storage Junction Temperature Range

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Schottky

This 30V MOSFET is designed to

diode

– Continuous

– Pulsed

TO-220

FDP Series

FDB6690S

FDP6690S

Device

The performance of

Parameter

using

= 25 C

Fairchild’s

Derate above 25 C

=25

C unless otherwise noted

Reel Size

Tube

13’’

(Note 1)

™

Features

TO-263AB

FDB Series

21 A, 30 V.

Includes SyncFET Schottky body diode

Low gate charge (11nC typical)

High performance trench technology for extremely

High power and current handling capability

low R

DS(ON)

and fast switching

Tape width

DS(ON)

–55 to +150

24mm

Ratings

n/a

62.5

140

275

0.5

2.6

= 15.5 m

= 23.0 m

SEPTEMBER 2001

@ V

FDP6690S/FDB6690S Rev C (W)

= 10 V

= 4.5 V

Quantity

800 units

Units

W/ C

C/W

Related parts for FDB6690S

FDB6690S Summary of contents

Page 1

... The FDP6690S includes DS(ON) an integrated Schottky diode using monolithic SyncFET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode. G TO-220 D S FDP Series Absolute Maximum Ratings ...

Page 2

... 10mA, Referenced =125 1.0 MHz GEN 21A 3.5 A (Note (Note 3 300 A/µs (Note Min Typ Max Units 140 mV/ C 500 µA 100 nA –100 –4 mV/ C 12.0 15.5 m 18.5 23.0 18.0 22 1238 pF 342 pF 104 0.51 0 FDP6690S/FDB6690S Rev C (W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 4.0V 4.5V 5.0V 6.0V 7.0V 8.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDP6690S/FDB6690S Rev C ( 0.8 ...

Page 4

... Figure 10. Single Pulse Maximum 0.001 0. TIME (sec 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 2.6°C 25°C A 0.001 0.01 0 TIME (sec) 1 Power Dissipation. R ( 2.6 ° Duty Cycle 0.1 1 FDP6690S/FDB6690S Rev C (W) ...

Page 5

... Schottky barrier diodes exhibit significant leakage at This diode high temperature and high reverse voltage. increase the power in the device. 0.01 0.001 0.0001 0.00001 0 Figure 14. SyncFET diode reverse leakage versus drain-source voltage and This will 100 REVERSE VOLTAGE (V) DS temperature. FDP6690S/FDB6690S Rev C (W) ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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