MOSFET N-CH 30V 42A TO-263AB

FDB6690S

Manufacturer Part NumberFDB6690S
DescriptionMOSFET N-CH 30V 42A TO-263AB
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDB6690S datasheet
 


Specifications of FDB6690S

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs15.5 mOhm @ 21A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C42AVgs(th) (max) @ Id3V @ 1mA
Gate Charge (qg) @ Vgs15nC @ 5VInput Capacitance (ciss) @ Vds1238pF @ 15V
Power - Max48WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.00155 Ohms @ 10 V
Forward Transconductance Gfs (max / Min)33 SDrain-source Breakdown Voltage30 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current42 A
Power Dissipation48 WMaximum Operating Temperature+ 150 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 1/6

Download datasheet (89Kb)Embed
Next
FDP6690S/FDB6690S
30V N-Channel PowerTrench SyncFET
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies.
This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
and low gate charge. The FDP6690S includes
DS(ON)
an
integrated
Schottky
diode
using
monolithic SyncFET technology.
The performance of
the FDP6690S/FDB6690S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6035AL/FDB6035AL in parallel
with a Schottky diode.
G
TO-220
D
S
FDP Series
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
– Continuous
D
– Pulsed
P
Total Power Dissipation @ T
D
T
, T
Operating and Storage Junction Temperature Range
J
STG
T
Maximum lead temperature for soldering purposes,
L
1/8” from case for 5 seconds
Thermal Characteristics
R
Thermal Resistance, Junction-to-Case
JC
R
Thermal Resistance, Junction-to-Ambient
JA
Package Marking and Ordering Information
Device Marking
Device
FDB6690S
FDB6690S
FDP6690S
FDP6690S
2001 Fairchild Semiconductor Corporation
Features
21 A, 30 V.
Includes SyncFET Schottky body diode
Fairchild’s
Low gate charge (11nC typical)
High performance trench technology for extremely
low R
and fast switching
DS(ON)
High power and current handling capability
D
G
S
TO-263AB
FDB Series
o
T
=25
C unless otherwise noted
A
(Note 1)
(Note 1)
= 25 C
C
Derate above 25 C
Reel Size
13’’
Tube
SEPTEMBER 2001
R
= 15.5 m
@ V
= 10 V
DS(ON)
GS
R
= 23.0 m
@ V
= 4.5 V
DS(ON)
GS
D
G
S
Ratings
Units
30
V
V
20
A
42
140
W
48
W/ C
0.5
C
–55 to +150
C
275
2.6
C/W
62.5
C/W
Tape width
Quantity
24mm
800 units
n/a
45
FDP6690S/FDB6690S Rev C (W)

FDB6690S Summary of contents

  • Page 1

    ... The FDP6690S includes DS(ON) an integrated Schottky diode using monolithic SyncFET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode. G TO-220 D S FDP Series Absolute Maximum Ratings ...

  • Page 2

    ... 10mA, Referenced =125 1.0 MHz GEN 21A 3.5 A (Note (Note 3 300 A/µs (Note Min Typ Max Units 140 mV/ C 500 µA 100 nA –100 –4 mV/ C 12.0 15.5 m 18.5 23.0 18.0 22 1238 pF 342 pF 104 0.51 0 FDP6690S/FDB6690S Rev C (W) ...

  • Page 3

    ... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 4.0V 4.5V 5.0V 6.0V 7.0V 8.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDP6690S/FDB6690S Rev C ( 0.8 ...

  • Page 4

    ... Figure 10. Single Pulse Maximum 0.001 0. TIME (sec 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 2.6°C 25°C A 0.001 0.01 0 TIME (sec) 1 Power Dissipation. R ( 2.6 ° Duty Cycle 0.1 1 FDP6690S/FDB6690S Rev C (W) ...

  • Page 5

    ... Schottky barrier diodes exhibit significant leakage at This diode high temperature and high reverse voltage. increase the power in the device. 0.01 0.001 0.0001 0.00001 0 Figure 14. SyncFET diode reverse leakage versus drain-source voltage and This will 100 REVERSE VOLTAGE (V) DS temperature. FDP6690S/FDB6690S Rev C (W) ...

  • Page 6

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...