FDB6690S Fairchild Semiconductor, FDB6690S Datasheet - Page 2

• Manufacturer Part Number: FDB6690S
• Description: MOSFET N-CH 30V 42A TO-263AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB6690S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 1238pF @ 15V
• Power - Max: 48W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.00155 Ohms @ 10 V
• Forward Transconductance Gfs (max / Min): 33 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
Drain-Source Avalanche Ratings
W
I
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics
V
t
Q
AR
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
rr
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
DSS
T
GS(th)
T
DSS
J
J
DSS
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
(Note 2)
(Note 2)
(Note 2)
Single Pulse, V
T
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
A
D
D
F
iF
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DS
GS
DS
GS
GS
GS
= 3.5 A,
= 10mA, Referenced to 25 C
= 10mA, Referenced to 25 C
/d
=10 V, I
= 0 V,
= 24 V,
= 20 V,
= –20 V, V
= V
= 10 V,
= 4.5 V, I
= 10 V,
= 10 V,
= 15 V,
= 15 V,
= 10 V,
= 15 V,
= 5 V
= 0 V,
= 0 V,
t
= 300 A/µs
Test Conditions
GS
,
D
=21 A, T
I
I
S
S
DD
I
V
V
I
I
V
I
V
D
D
D
D
D
I
R
I
= 3.5 A
= 7 A
D
D
GS
DS
DS
DS
GS
= 1mA
= 1mA
= 21 A
= 17 A
= 23 A
GEN
= 25 V, I
= 1 A,
= 21A,
= 0 V
= 0 V
= 0 V
= 10 V
= 0 V,
= 6
J
=125 C
D
(Note 1)
(Note 1)
(Note 2)
=11A
Min
30
60
1
Typ Max Units
1238
12.0
18.5
18.0
0.51
0.69
342
104
2.2
25
–4
33
11
23
13
11
21
25
9
5
4
FDP6690S/FDB6690S Rev C (W)
–100
15.5
23.0
22.5
140
100
500
0.7
11
20
18
37
23
15
3
mV/ C
mV/ C
m
µA
nA
nA
nC
nC
nC
nS
nC
mJ
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
V
A