IRLI510ATU Fairchild Semiconductor, IRLI510ATU Datasheet

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IRLI510ATU

Manufacturer Part Number
IRLI510ATU
Description
MOSFET N-CH 100V 5.6A I2PAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRLI510ATU

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
440 mOhm @ 2.8A, 5V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 5V
Input Capacitance (ciss) @ Vds
235pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©1999 Fairchild Semiconductor Corporation
Thermal Resistance
FEATURES
Absolute Maximum Ratings
*
When mounted on the minimum pad size recommended (PCB Mount).
T
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 C Operating Temperature
Lower Leakage Current: 10 A (Max.) @ V
Lower R
Symbol
Symbol
J
dv/dt
R
R
R
V
V
E
E
I
I
P
, T
I
T
DM
AR
DSS
D
GS
AS
AR
JC
JA
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
: 0.336
(Typ.)
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
A
C
=25 C)
=25 C)
C
C
DS
=25 C)
=100 C)
*
= 100V
*
(3)
(1)
(2)
(1)
(1)
Typ.
--
--
--
- 55 to +175
IRLW/I510A
0.25
Value
100
300
1
5.6
4.0
5.6
3.7
6.5
3.8
20
62
37
BV
R
I
20
3
1. Gate 2. Drain 3. Source
D
D
DS(on)
2
-PAK
= 5.6 A
DSS
Max.
62.5
4.1
40
= 0.44
= 100 V
2
1
2
3
I
2
-PAK
Units
Units
W/ C
V/ns
C/W
mJ
mJ
W
W
V
A
A
V
A
C
Rev. B
1

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IRLI510ATU Summary of contents

Page 1

... Maximum Lead Temp. for Soldering T L Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Junction-to-Ambient JA R Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount). ©1999 Fairchild Semiconductor Corporation IRLW/I510A BV DSS R DS(on 5 -PAK = 100V Gate 2. Drain 3. Source Value ...

Page 2

IRLW/I510A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...

Page 3

Fig 1. Output Characteristics Top : 7 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3 ...

Page 4

IRLW/I510A Fig 7. Breakdown Voltage vs. Temperature ...

Page 5

Fig 12. Gate Charge Test Circuit & Waveform Current Regulator Same Type 50k as DUT 12V 200nF 300nF V GS DUT 3mA R 1 Current Sampling (I ) Current Sampling (I G Resistor Fig 13. Resistive Switching Test Circuit & ...

Page 6

IRLW/I510A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver -------------------------- Driver ) I , Body Diode Forward Current DUT ...

Page 7

D PAK/TO-263 Package Dimensions 2 D PAK/TO-263 (FS PKG CODE AB) 9.90 0.20 1.27 0.10 2.54 TYP 10.00 0.20 4.50 0.80 0.10 2.54 TYP 10.00 (8.00) (4.40) (2XR0.45) 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 ...

Page 8

I PAK Package Dimensions 2 I PAK (FS PKG CODE AO) 9.90 1.27 0.10 2.54 TYP 10.00 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Dimensions in Millimeters September ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...

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