FQI1P50TU Fairchild Semiconductor, FQI1P50TU Datasheet - Page 3

• Manufacturer Part Number: FQI1P50TU
• Description: MOSFET P-CH 500V 1.5A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI1P50TU

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 Ohm @ 750mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor International
Typical Characteristics
10
10
600
500
400
300
200
100
10
16
14
12
10
-1
-2
8
6
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Top :
Bottom : -5.5 V
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
1
-V
-V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
10
D
10
, Drain Current [A]
V
0
0
GS
= - 20V
V
GS
2
= - 10V
C
C
C
iss
rss
oss
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
10
1. 250 μ s Pulse Test
2. T
10
※ Note : T
3
gs
gd
ds
1
1
C
+ C
+ C
= 25 ℃
gd
gd
※ Notes :
(C
1. V
2. f = 1 MHz
J
ds
= 25℃
= shorted)
GS
= 0 V
4
3
10
10
10
10
12
10
-1
-1
8
6
4
2
0
0
0
0.0
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation vs. Source Current
0.5
2
25℃
150℃
150℃
4
-V
-V
Q
SD
GS
and Temperature
G
1.0
, Source-Drain Voltage [V]
4
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
25℃
V
DS
V
DS
= -400V
DS
= -250V
= -100V
1.5
-55℃
6
6
2.0
8
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= -50V
= 0V
2.5
10
D
= -1.5 A
Rev. A3, Oct 2008
3.0
10
12