FQI1P50TU Fairchild Semiconductor, FQI1P50TU Datasheet - Page 4

• Manufacturer Part Number: FQI1P50TU
• Description: MOSFET P-CH 500V 1.5A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI1P50TU

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10.5 Ohm @ 750mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor International
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
-2
Figure 9. Maximum Safe Operating Area
-100
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
, Junction Temperature [
DS
10
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
※ Notes :
1 0
1 0
1
1 0
1. T
2. T
3. Single Pulse
- 1
- 2
0
1 0
C
J
= 150
= 25
- 5
0 .0 2
0 .0 1
D = 0 .5
0 .0 5
o
C
o
0 .2
0 .1
50
C
DS(on)
Figure 11. Transient Thermal Response Curve
DC
100
10
1 0
(Continued)
s in g le p u ls e
2
10 ms
o
- 4
C]
※ Notes :
t
1. V
2. I
1 ms
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
150
= 0 V
100 s
1 0
- 3
200
10
3
4
1 0
- 2
1.5
1.2
0.9
0.6
0.3
0.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
※ N o t e s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
- 1
P
θ J C
J M
-50
DM
- T
50
( t ) = 1 . 9 8 ℃ / W M a x .
C
vs. Case Temperature
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
C
D M
t
1 0
0
, Case Temperature [ ℃ ]
2
* Z
0
75
1
/ t
θ J C
2
( t )
50
100
1 0
1
100
o
C]
※ Notes :
125
1. V
2. I
150
D
GS
= -0.75 A
= -10 V
Rev. A3, Oct 2008
200
150