FQI1P50TU Fairchild Semiconductor, FQI1P50TU Datasheet - Page 6

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FQI1P50TU

Manufacturer Part Number
FQI1P50TU
Description
MOSFET P-CH 500V 1.5A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQI1P50TU

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10.5 Ohm @ 750mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
1.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor International
( Driver )
( Driver )
( DUT )
( DUT )
( DUT )
( DUT )
V
V
I
I
V
V
SD
SD
GS
GS
DS
DS
V
V
GS
GS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
R
R
G
G
Driver
Driver
DUT
DUT
I
I
FM
FM
I
I
D =
D =
D =
SD
SD
, Body Diode Forward Current
, Body Diode Forward Current
Forward Voltage Drop
Forward Voltage Drop
--------------------------
--------------------------
--------------------------
Gate Pulse Period
Gate Pulse Period
Gate Pulse Period
Gate Pulse Width
Gate Pulse Width
Gate Pulse Width
Body Diode
Body Diode
Compliment of DUT
Compliment of DUT
V
V
Body Diode Recovery dv/dt
Body Diode Recovery dv/dt
+
+
_
_
DS
DS
• dv/dt controlled by R
• dv/dt controlled by R
• I
• I
V
V
(N-Channel)
(N-Channel)
SD
SD
SD
SD
6
Body Diode Reverse Current
Body Diode Reverse Current
controlled by pulse period
controlled by pulse period
I
I
RM
RM
L
L L
G
G
di/dt
di/dt
V
V
V
V
10V
10V
DD
DD
DD
DD
Rev. A3, Oct 2008

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