HUFA76609D3S Fairchild Semiconductor, HUFA76609D3S Datasheet

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HUFA76609D3S

Manufacturer Part Number
HUFA76609D3S
Description
MOSFET N-CH 100V 10A DPAK
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUFA76609D3S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
160 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
425pF @ 25V
Power - Max
49W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
10A, 100V, 0.165 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
Symbol
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
NOTE:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
1. T
Continuous (T
Continuous (T
Continuous (T
Continuous (T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(FLANGE)
DRAIN
J
= 25
JEDEC TO-251AA
HUFA76609D3
o
C to 150
C
C
C
C
= 25
= 25
= 100
= 100
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
o
o
C, V
C, V
o
o
GS
G
C, V
C, V
SOURCE
DRAIN
= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
GS
GATE
GS
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
S
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
SOURCE
T
Data Sheet
GATE
C
= 25
JEDEC TO-252AA
HUFA76609D3S
o
C, Unless Otherwise Specified
(FLANGE)
DRAIN
HUFA76609D3, HUFA76609D3S
Features
• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76609D3ST.
HUFA76609D3
HUFA76609D3S
- r
- r
- Temperature Compensated PSPICE® and SABER™
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
PART NUMBER
Electrical Models
DS(ON)
DS(ON)
J
, T
January 2002
DGR
DSS
STG
DM
pkg
GS
= 0.160
= 0.165
D
D
D
D
D
L
HUFA76609D3, HUFA76609D3S
TO-251AA
TO-252AA
GS
V
V
PACKAGE
GS
GS
Figures 6, 17, 18
Curves
-55 to 175
Figure 4
0.327
10V
5V
100
100
300
260
10
10
49
16
7
7
HUFA76609D3, HUFA76609D3S Rev. B
76609D
76609D
BRAND
UNITS
W/
o
o
o
W
V
V
V
A
A
A
A
C
C
C
o
C

Related parts for HUFA76609D3S

HUFA76609D3S Summary of contents

Page 1

... UIS Rating Curve • Switching Time vs R Ordering Information PART NUMBER HUFA76609D3 HUFA76609D3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76609D3ST Unless Otherwise Specified January 2002 = 0.160 10V ...

Page 2

... MIN TYP 100 - o C (Figure 12 0.130 - 0.135 - 0.140 - - - - - - - 50V 7.3 = 1.0mA - 0.5 - 1.4 - 3.4 - 425 - MIN TYP - - - - - - - - HUFA76609D3, HUFA76609D3S Rev. B MAX UNITS - 250 A 100 0.160 0.165 0.168 o 3.06 C/W o 100 C 141 8 MAX UNITS 1. 273 nC ...

Page 3

... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUFA76609D3, HUFA76609D3S Rev. B 175 ...

Page 4

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 3.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2 10V 10A GS D 2.0 1.5 1.0 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE HUFA76609D3, HUFA76609D3S Rev + 3. 120 160 200 o C) ...

Page 5

... I = 250 A D 1.1 1.0 0.9 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE 50V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g GATE CURRENT 120 V = 10V 50V 10A GATE TO SOURCE RESISTANCE ( ) GS FIGURE 16. SWITCHING TIME vs GATE RESISTANCE HUFA76609D3, HUFA76609D3S Rev. B 120 160 200 10A d(OFF d(ON ...

Page 6

... FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g( g(TH FIGURE 20. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM HUFA76609D3, HUFA76609D3S Rev 10V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... August 1999 DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE - + RLGATE S1A S2A S1B S2B EGS EDS RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP VBAT RVTHRES HUFA76609D3, HUFA76609D3S Rev. B LDRAIN DRAIN 2 RLDRAIN SOURCE 3 ...

Page 8

... LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUFA76609D3, HUFA76609D3S Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUFA76609D3, HUFA76609D3S Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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