HUFA76629D3S Fairchild Semiconductor, HUFA76629D3S Datasheet

no-image

HUFA76629D3S

Manufacturer Part Number
HUFA76629D3S
Description
MOSFET N-CH 100V 20A DPAK
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUFA76629D3S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
1285pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUFA76629D3ST
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2002 Fairchild Semiconductor Corporation
20A, 100V, 0.054 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
Symbol
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
NOTES:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
1. T
Continuous (T
Continuous (T
Continuous (T
Continuous (T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(FLANGE)
DRAIN
J
= 25
JEDEC TO-251AA
HUFA76629D3
o
C to 150
C
C
C
C
= 25
= 25
= 100
= 100
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
SOURCE
C.
o
o
C, V
C, V
o
o
DRAIN
GS
G
C, V
C, V
GATE
= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
GS
GS
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
S
SOURCE
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
GATE
T
Data Sheet
C
JEDEC TO-252AA
HUFA76629D3S
= 25
o
C, Unless Otherwise Specified
(FLANGE)
DRAIN
HUFA76629D3, HUFA76629D3S
Features
• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA76629D3ST.
HUFA76629D3
HUFA76629D3S
- r
- r
- Temperature Compensated PSPICE® and SABER™
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
PART NUMBER
Electriecal Models
DS(ON)
DS(ON)
January 2002
J
, T
= 0.052
= 0.054
DGR
DSS
STG
pkg
DM
GS
D
D
D
D
D
L
HUFA76629D3, HUFA76629D3S
TO-251AA
TO-252AA
GS
V
V
PACKAGE
GS
GS
Curves
Figures 6, 17, 18
-55 to 175
Figure 4
10V
5V
0.74
100
100
110
300
260
20
20
20
20
16
HUFA76629D3, HUFA76629D3S Rev. B
76629D
76629D
BRAND
UNITS
W/
o
o
o
W
V
V
V
A
A
A
A
C
C
C
o
C

Related parts for HUFA76629D3S

HUFA76629D3S Summary of contents

Page 1

... Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs R Ordering Information PART NUMBER HUFA76629D3 HUFA76629D3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76629D3ST Unless Otherwise Specified , 0.052 10V ...

Page 2

... MIN TYP 100 - o C (Figure 12 0.0415 - 0.046 - 0.047 - - - - - - - 11 - 114 - 6 50V 1.0mA - 1 1285 - 270 - 65 MIN TYP - - - - - - - - HUFA76629D3, HUFA76629D3S Rev. B MAX UNITS - 250 A 100 0.052 0.054 0.055 o 1.36 C/W o 100 C/W 190 145 190 1 MAX UNITS 1.25 V 1.00 V 110 ns 370 nC ...

Page 3

... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V 4. 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUFA76629D3, HUFA76629D3S Rev. B 175 ...

Page 4

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 3.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.5 2.0 1.5 1.0 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE HUFA76629D3, HUFA76629D3S Rev + 0 3. 10V 20A GS D 120 ...

Page 5

... A D 1.1 1.0 0.9 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE 50V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g GATE CURRENT V = 10V 50V 20A d(OFF GATE TO SOURCE RESISTANCE ( ) GS FIGURE 16. SWITCHING TIME vs GATE RESISTANCE HUFA76629D3, HUFA76629D3S Rev. B 120 160 160 200 20A D = 10A d(ON ...

Page 6

... FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g( g(TH FIGURE 20. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM HUFA76629D3, HUFA76629D3S Rev 10V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... July 1999 DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE - + RLGATE S1A S2A S1B S2B EGS EDS RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP VBAT RVTHRES HUFA76629D3, HUFA76629D3S Rev. B LDRAIN DRAIN 2 RLDRAIN SOURCE 3 ...

Page 8

... LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUFA76629D3, HUFA76629D3S Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUFA76629D3, HUFA76629D3S Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

Related keywords