HUFA75623S3ST Fairchild Semiconductor, HUFA75623S3ST Datasheet
HUFA75623S3ST
Specifications of HUFA75623S3ST
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HUFA75623S3ST Summary of contents
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... NOTE: When ordering, use the entire part number i.e., HUFA75623P3 Unless Otherwise Specified = 0.064 10V V GS PACKAGE BRAND TO-220AB 75623P TO-263AB 75623S HUFA75623P3, HUFA75623S3ST 100 DSS 100 DGR Figure 4 DM Figures -55 to 175 J STG 300 L 260 pkg HUFA75623P3, HUFA75623S3ST Rev. B UNITS ...
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... SYMBOL TEST CONDITIONS 22A 11A 22A, dI /dt = 100A 22A, dI /dt = 100A MIN TYP 100 - - - 0.054 - - - - - - - 7 50V 1.0mA - 1.7 - 3.5 - 8.7 - 790 - 215 - 70 MIN TYP - - - - - - - - HUFA75623P3, HUFA75623S3ST Rev. B MAX UNITS - 250 A 100 0.064 o 1. 130 MAX UNITS 1.25 V 1.00 V 100 ns 313 nC ...
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... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUFA75623P3, HUFA75623S3ST Rev. B 175 ...
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... STARTING T o STARTING T = 150 0.001 0.01 0 TIME IN AVALANCHE (ms) AV CAPABILITY 20V 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 1 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE HUFA75623P3, HUFA75623S3ST Rev +1] DSS 250 120 160 200 o C) ...
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... C) FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 50V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. 2000 1000 OSS DS GD 100 C RSS 20 0.1 1 DRAIN TO SOURCE VOLTAGE ( 22A 11A HUFA75623P3, HUFA75623S3ST Rev 0V 1MHz ISS 100 ...
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... FIGURE 18. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. SWITCHING TIME WAVEFORM HUFA75623P3, HUFA75623S3ST Rev 20V GS t OFF d(OFF 90% 10% 90% 50% ...
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... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN 18 EBREAK - 16 21 MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUFA75623P3, HUFA75623S3ST Rev. B DRAIN 2 SOURCE 3 ...
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... LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUFA75623P3, HUFA75623S3ST Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUFA75623P3, HUFA75623S3ST Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...